| 题名 | Silicon nitride stress liner impacts on the electrical characteristics of AlGaN/GaN HEMTs |
| 作者 | |
| 通讯作者 | Yu, Hongyu |
| DOI | |
| 发表日期 | 2019
|
| ISBN | 978-1-7281-0287-0
|
| 会议录名称 | |
| 页码 | 1-3
|
| 会议日期 | 12-14 June 2019
|
| 会议地点 | Xi'an, China
|
| 出版者 | |
| 摘要 | Due to the piezoelectric nature of GaN, the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) could be engineered by strain. In this work, SiNx deposited using dual-frequency plasma-enhanced chemical vapor deposition (PECVD) was used as a stressor. The output performance of the devices was dominated by the surface passivation instead of the strain effect. However, the threshold voltage was increased by the liner-induced strain, supporting strain engineering as an effective approach to pursue the normally-off operation of AlGaN/GaN HEMTs. |
| 关键词 | |
| 学校署名 | 第一
; 通讯
|
| 相关链接 | [来源记录] |
| 收录类别 | |
| EI入藏号 | 20193007225823
|
| EI主题词 | Aluminum Gallium Nitride
; Electron Mobility
; Electrons
; Gallium Nitride
; Iii-v Semiconductors
; Nitrides
; Passivation
; Plasma Cvd
; Plasma Enhanced Chemical Vapor Deposition
; Silicon Nitride
; Threshold Voltage
; Two Dimensional Electron Gas
|
| EI分类号 | Protection Methods:539.2.1
; Electricity: Basic Concepts And Phenomena:701.1
; Semiconducting Materials:712.1
; Semiconductor Devices And Integrated Circuits:714.2
; Chemical Reactions:802.2
; Inorganic Compounds:804.2
; Coating Techniques:813.1
|
| 来源库 | EV Compendex
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8754212 |
| 引用统计 |
被引频次[WOS]：0
|
| 成果类型 | 会议论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/50893 |
| 专题 | 工学院_深港微电子学院 工学院_材料科学与工程系 |
| 作者单位 | 1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China 2.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, Hong Kong 3.Department of Materials Engineering, University of British Columbia, Vancouver; BC, Canada 4.School of Engineering and Computer Science, Washington State University, Vancouver; WA, United States 5.Shenzhen Key Laboratory of the Third Generation Semi-conductor, Shenzhen, Guangdong, China 6.GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, Guangdong, China |
| 第一作者单位 | 深港微电子学院 |
| 通讯作者单位 | 深港微电子学院 |
| 第一作者的第一单位 | 深港微电子学院 |
| 推荐引用方式 GB/T 7714 |
Cheng, Wei-Chih,Fang, Tao,Lei, Siqi,et al. Silicon nitride stress liner impacts on the electrical characteristics of AlGaN/GaN HEMTs[C]:Institute of Electrical and Electronics Engineers Inc.,2019:1-3.
|
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| 10.1109@EDSSC.2019.8（1461KB） | -- | -- | 开放获取 | -- | 浏览 | |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论