南方科技大学知识苑(SUSTech KC): Improving the drive current of AlGaN/GaN HEMT using external strain engineering

题名	Improving the drive current of AlGaN/GaN HEMT using external strain engineering
作者	Cheng, Wei-Chih 1,3; Lei, Siqi1 ; Li, Wenmao1 ; Zhao, Feng 2; Chan, Mansun 3; Yu, Hongyu1
通讯作者	Yu, Hongyu
DOI	10.1109/EDTM.2019.8731108
发表日期	2019
ISBN	978-1-5386-6509-1
会议录名称	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
页码	374-376
会议日期	12-15 March 2019
会议地点	Singapore, Singapore
出版者	Institute of Electrical and Electronics Engineers Inc.
摘要	The concentration of the two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction is dominated by the stress developed in AlGaN layer. In this work, the output performance of AlGaN/GaN high electron mobility transistors (HEMTs) was improved by depositing a stressed SiNx as a passivation layer, and the external strain applied onto AlGaN was measured using Raman spectroscopy. As a result, an improvement in on-state resistance and drive current of the device was attained due to the extra 2DEG concentration induced by the external strain. Also, to determine the strain-induced threshold-voltage shift, the stress distribution over the gate region was analyzed. © 2019 IEEE.
关键词	GaN HEMT Strain
学校署名	第一 ; 通讯
相关链接	[IEEE记录]
收录类别	EI
EI入藏号	20192607103022
EI主题词	Aluminum Alloys ; Aluminum Gallium Nitride ; Electron Gas ; Electrons ; Gallium Alloys ; Gallium Nitride ; Heterojunctions ; Iii-v Semiconductors ; Manufacture ; Passivation ; Semiconductor Alloys ; Strain ; Threshold Voltage ; Two Dimensional Electron Gas
EI分类号	Heat Treatment Processes:537.1 ; Protection Methods:539.2.1 ; Aluminum Alloys:541.2 ; Nonferrous Metals And Alloys Excluding Alkali And Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts And Phenomena:701.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Materials Science:951
来源库	EV Compendex
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8731108
引用统计	被引频次[WOS]：0
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/50906
专题	南方科技大学工学院_深港微电子学院
作者单位	1.Southern University of Science and Technology, Shenzhen, China 2.Washington State University, United States 3.Hong Kong University of Science and Technology, Hong Kong
第一作者单位	南方科技大学
通讯作者单位	南方科技大学
第一作者的第一单位	南方科技大学
推荐引用方式 GB/T 7714	Cheng, Wei-Chih,Lei, Siqi,Li, Wenmao,et al. Improving the drive current of AlGaN/GaN HEMT using external strain engineering[C]:Institute of Electrical and Electronics Engineers Inc.,2019:374-376.