A charge storage based enhancement mode AlGaN/GaN high electron mobility transistor

Wang, Hui1,2,3; Jiang, Ling Li1,3; Wang, Ning1,3; Yu, Hong Yu1,3; Lin, Xin Peng1,3

10.4028/www.scientific.net/MSF.913.870

2018

0255-5476

MATER SCI FORUM

913

870-875

Yinchuan City, Ningxia, China

Trans Tech Publications Ltd

In this work, a charge storage based enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. A stacked gate dielectrics, consisting of a tunnel oxide, a charge trap layer and a blocking oxide are applied in the HEMT structure. The E-mode can be realized by negative charge storage within the charge trap layer during the programming process. The impact of the programming condition and the thickness of the dielectrics on the threshold voltage (Vth) are simulated systematically. It is found that the Vthincreases with the increasing programming voltage and time due to the increase of the storage charge. Under proper programming condition, the Vthcan be increased to more than 2 V. Moreover, It is also found that the Vthincreases with the decrease of the thickness of the dielectrics. In addition, it is found that the breakdown voltage of such HEMT can be adjusted by varying the gate dielectric stacks.
© 2018 Trans Tech Publications, Switzerland.

第一 ; 通讯

EI

[:2017A050506002] ; [JCYJ20170412153356899]

20181104912241

Aluminum gallium nitride ; Charge trapping ; Dielectric materials ; Electron mobility ; Gallium nitride ; Gate dielectrics ; III-V semiconductors ; Storage (materials) ; Threshold voltage

Storage:694.4 ; Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3

EV Compendex

1.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, No 1088, Xueyuan Rd., Xili, Nanshan District, Shenzhen; Guangdong; 518055, China
2.School of Electronic Science and Engineering, Southeast University, No 2, Sipailou Rd., Xuanwu District, Nanjing; Jiangsu; 210096, China
3.Shenzhen Key Laborary of The Third Generation Semi-conductor, No 1088, Xueyuan Rd., Xili, Nanshan District, Shenzhen; Guangdong; 518055, China

Wang, Hui,Jiang, Ling Li,Wang, Ning,et al. A charge storage based enhancement mode AlGaN/GaN high electron mobility transistor[C]:Trans Tech Publications Ltd,2018:870-875.