Top-emitting quantum-dot light-emitting diodes with all the p-i-n functional layers deposited by solution processes

Jiang, Yibin1,2; Chen, Shuming2; Kwok, Hoi-Sing1

10.1002/sdtp.11606

2017

21680159

SID Symposium, Seminar, and Exhibition 2017, Display Week 2017

48

1

161-164

Los Angeles, CA, United states

Blackwell Publishing Ltd

A green top-emitting quantum-dot light-emitting diode (TQLE) with conventional structure is demonstrated in this study with all its functional layers, including hole transportation layer, emitting layer and electron transportation layer, fabricated by spin-coating processes. This green QLED exhibits an external quantum efficiency (EQE) of 6.4 % and a maximum brightness of 200000 cd/m², which is the highest values reported for green TQLEDs in literature. Besides, this is the first report of all-solution-processed TQLEDs.
© (2017) by SID-the Society for Information Display. All rights reserved.

其他

EI

20181304960283

Coatings ; Diodes ; Luminance ; Nanocrystals ; Semiconductor quantum dots ; Spin coating

Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Coating Techniques:813.1 ; Coating Materials:813.2

EV Compendex

1.State Key Lab on Advanced Displays and Optoelectronics, Department of Electronic and Computer Engineering, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong
2.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen; 518055, China

Jiang, Yibin,Chen, Shuming,Kwok, Hoi-Sing. Top-emitting quantum-dot light-emitting diodes with all the p-i-n functional layers deposited by solution processes[C]:Blackwell Publishing Ltd,2017:161-164.