A 0.035mm2 150mA fast-response low-dropout regulator based on matching-enhanced error amplifier and multi-threshold-controlled unity-gain buffer in 0.13μm CMOS

Zhan, Chenchang1; Ki, Wing-Hung2; Zheng, Jiawei2; Liu, Yonggen2

10.1109/ISCAS.2016.7539151

2016

0271-4310

978-1-4799-5342-4

2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016

2016-July

2703-2706

22-25 May 2016

Montreal, QC, Canada

Institute of Electrical and Electronics Engineers Inc.

A low-dropout regulator (LDR) using a matching-enhanced error amplifier (ME-EA) and a multi-threshold-controlled unity-gain buffer (MTC-UGB) is proposed in this work. With the majority of transistors being high-voltage devices of the process, the regulator tolerates a high in put voltage range, which alleviates the reliability concern caused by low-voltage transistors. The ME-EA allows for tight line and load regulations. The MTC-UGB, by using low-voltage input transistors with locally regulated terminal voltage, enables large loop bandwidth and fast load transient responses without using compensation capacitor or large ESR of the output capacitor for compensation. Fabricated in a 0.13μm CMOS process, the proposed LDR occupies 0.035 mm2 of active area and consumes 18 μA of quiescent current and achieves 6 mV of voltage dip for 150 mA of load transient.
© 2016 IEEE.

low-dropout regulator matching-enhanced error amplifier multi-threshold-controlled unity-gain buffer

第一

EI

20163502751363

Buffer amplifiers ; CMOS integrated circuits ; Errors ; Power quality ; Transient analysis ; Voltage regulators

Electric Power Distribution:706.1.2 ; Amplifiers:713.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Control Equipment:732.1

EV Compendex

1.Southern University of Science and Technology, Shenzhen, China
2.Hong Kong University of Science and Technology, Hong Kong, Hong Kong

Zhan, Chenchang,Ki, Wing-Hung,Zheng, Jiawei,et al. A 0.035mm2 150mA fast-response low-dropout regulator based on matching-enhanced error amplifier and multi-threshold-controlled unity-gain buffer in 0.13μm CMOS[C]:Institute of Electrical and Electronics Engineers Inc.,2016:2703-2706.