南方科技大学知识苑(SUSTech KC): Overshoot stress impact on HfO2 high-κ layer dynamic SILC

题名	Overshoot stress impact on HfO2 high-κ layer dynamic SILC
作者	Wan, Guangxing 1,2; Duan, Tianli1 ; Zhang, Shuxiang 1,2; Jiang, Lingli1 ; Tang, Bo 2; Zhao, Chao 2; Zhu, Huilong 2; Yu, Hongyu1
DOI	10.1109/ASICON.2015.7516943
发表日期	2016
会议录名称	11th IEEE International Conference on Advanced Semiconductor Integrated Circuits (ASIC), ASICON 2015
会议地点	Chengdu, China
出版者	Institute of Electrical and Electronics Engineers Inc.
摘要	Overshoot stress (mimicking the actual IC operating condition) in dynamic stress induced leakage increase (D-SILC) on ultra-thin HfO2 (EOT∼0.8 nm) high-κ layer are investigated, which reveals that overshoot is of great concern to high-κ layer leakage current. The D-SILC is correlated with traps generation which is dependent on stress input and release. A degradation model based on the oxygen vacancies is provided to understand the above mentioned phenomena. © 2015 IEEE.
学校署名	第一
收录类别	EI
EI入藏号	20163402733815
EI主题词	Oxygen vacancies
EI分类号	Chemical Products Generally:804 ; Crystalline Solids:933.1
来源库	EV Compendex
引用统计	被引频次[WOS]：0
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/51025
专题	工学院_深港微电子学院
作者单位	1.South University of Science and Technology of China, Shenzhen; 518055, China 2.Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
第一作者单位	南方科技大学
第一作者的第一单位	南方科技大学
推荐引用方式 GB/T 7714	Wan, Guangxing,Duan, Tianli,Zhang, Shuxiang,et al. Overshoot stress impact on HfO2 high-κ layer dynamic SILC[C]:Institute of Electrical and Electronics Engineers Inc.,2016.