Enhanced Performance of a Metal-insulator-semiconductor Structured p/n-Electrode for InGaN-based Green LEDs

Huang Wenjun; Miao Xiangyu; Liu Zhaojun

10.1109/SSLChinaIFWS57942.2023.10071078

2023

19th China International Forum on Solid State Lighting / 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA) (IFWS)

979-8-3503-4639-8

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

303-304

7-10 Feb. 2023

Suzhou, China

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

The effect of inserting an insulating layer between the p/n-electrode and the semiconductor are fabricated and investigated for gallium nitride (GaN)-based Micro light-emitting-diodes (mu-LEDs). The 2-nm Al2O3 insulator layer is inserted to form the MIS structure by using an atomic deposition system, which improves the interband tunneling efficiency and the corresponding hole injection efficiency somehow. Therefore, the current-voltage characteristic is increased when compared with a traditional GaN-LED.

Photonic band gap Atomic layer deposition Current-voltage characteristics Tunneling Light emitting diodes Insulators MIS devices

第一

英语

CPCI-S ; EI

Shenzhen Science and Technology Program[KQTD 20170810110313773]

Engineering

Engineering, Electrical & Electronic

WOS:000982300900076

20231513885032

Alumina ; Aluminum oxide ; Current voltage characteristics ; Efficiency ; III-V semiconductors ; Light emitting diodes ; Metal insulator boundaries ; MIS devices ; Wide band gap semiconductors

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Production Engineering:913.1

IEEE

Shenzhen Sitan Technology Company, Southern University of Science and Technology, Shenzhen, P.R. China

Huang Wenjun,Miao Xiangyu,Liu Zhaojun. Enhanced Performance of a Metal-insulator-semiconductor Structured p/n-Electrode for InGaN-based Green LEDs[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2023:303-304.