南方科技大学知识苑(SUSTech KC): Evidence for chiral superconductivity on a silicon surface

题名	Evidence for chiral superconductivity on a silicon surface
作者	Ming, F.1; Wu, X.2,3 ; Chen, C.2 ; Wang, K.D.2 ; Mai, P.4; Maier, T.A.4; Strockoz, J.5,6; Venderbos, J.W.F.5,6; González, C.7,8; Ortega, J.9; Johnston, S.10,11; Weitering, H.H.10,11
通讯作者	Wang, K.D.; Johnston, S.; Weitering, H.H.
发表日期	2023
DOI	10.1038/s41567-022-01889-1
发表期刊	Nature Physics 影响因子和分区
ISSN	1745-2473
EISSN	1745-2481
卷号	19页码:500-506
摘要	Tin adatoms on a Si(111) substrate with a one-third monolayer coverage form a two-dimensional triangular lattice with one unpaired electron per site. These electrons order into an antiferromagnetic Mott-insulating state, but doping the Sn layer with holes creates a two-dimensional conductor that becomes superconducting at low temperatures. Although the pairing symmetry of the superconducting state is currently unknown, the combination of repulsive interactions and frustration inherent in the triangular adatom lattice opens up the possibility of a chiral order parameter. Here we study the superconducting state of Sn/Si(111) using scanning tunnelling microscopy, scanning tunnelling spectroscopy and quasiparticle interference imaging. We find evidence for a doping-dependent superconducting critical temperature with a fully gapped order parameter, the presence of time-reversal symmetry breaking and a strong enhancement in zero-bias conductance near the edges of the superconducting domains. Although each individual piece of evidence could have a more mundane interpretation, our combined results suggest the possibility that Sn/Si(111) is an unconventional chiral d-wave superconductor. © 2023, The Author(s), under exclusive licence to Springer Nature Limited.
相关链接	[来源记录]
收录类别	EI ; SCI
语种	英语
重要成果	NI论文
学校署名	通讯
资助项目	We thank C. D. Batista, P. J. Hirschfeld, P. Kent, A. Tennant and R. Zhang for fruitful discussions. The experimental work and QPI calculations were supported by the Guangdong Basic and Applied Basic Research Foundation (ref no. 2021A1515012034) and by the Office of Naval Research under grant no. N00014-18-1-2675. F.M. acknowledges support from the NSFC (no. 12174456) and the Guangdong Basic and Applied Basic Research Foundation (grant no. 2020B1515020009). C.G. acknowledges financial support from the Community of Madrid through the project NANOMAGCOST CM-PS2018/NMT-4321 and the computer resources at Centro de Computación Científica at UAM (project Biofast) as well as Altamira, with the technical support provided by the Instituto de Física de Cantabria (IFCA) via project QHS-2021-3-0005. J.O. acknowledges financial support by the Spanish Ministry of Science and Innovation through grants MAT2017-88258-R and CEX2018-000805-M (María de Maeztu Programme for Units of Excellence in R&D). The DCA calculations were supported by the Scientific Discovery through Advanced Computing (SciDAC) program funded by the US Department of Energy (DOE), Office of Science, Advanced Scientific Computing Research, and Basic Energy Sciences, Division of Materials Sciences and Engineering. This research also used resources of the Oak Ridge Leadership Computing Facility, which is a DOE Office of Science User Facility supported under contract DE-AC05-00OR22725.
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000950225400006
出版者	Nature Research
EI入藏号	20230513471723
EI主题词	Scanning tunneling microscopy ; Silicon
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Physical Chemistry:801.4 ; Mechanics:931.1
来源库	EV Compendex
引用统计	被引频次[WOS]：18
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/519727
专题	理学院_物理系工学院_材料科学与工程系
作者单位	1.State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou, China 2.Department of Physics, Southern University of Science and Technology, Shenzhen, China 3.School of Physical Sciences, Great Bay University, Dongguan, China 4.Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge; TN, United States 5.Department of Physics, Drexel University, Philadelphia; PA, United States 6.Department of Materials Science and Engineering, Drexel University, Philadelphia; PA, United States 7.Departamento de Física de Materiales, Universidad Complutense de Madrid, Madrid, Spain 8.Instituto de Magnetismo Aplicado, UCM-ADIF, Madrid, Spain 9.Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Facultad de Ciencias, Universidad Autónoma de Madrid, Madrid, Spain 10.Department of Physics and Astronomy, The University of Tennessee, Knoxville; TN, United States 11.Institute of Advanced Materials and Manufacturing, The University of Tennessee, Knoxville; TN, United States
通讯作者单位	物理系
推荐引用方式 GB/T 7714	Ming, F.,Wu, X.,Chen, C.,et al. Evidence for chiral superconductivity on a silicon surface[J]. Nature Physics,2023,19:500-506.
APA	Ming, F..,Wu, X..,Chen, C..,Wang, K.D..,Mai, P..,...&Weitering, H.H..(2023).Evidence for chiral superconductivity on a silicon surface.Nature Physics,19,500-506.
MLA	Ming, F.,et al."Evidence for chiral superconductivity on a silicon surface".Nature Physics 19(2023):500-506.