南方科技大学知识苑(SUSTech KC): Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine

题名	Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine
作者	Duan, Xijian1,2,3 ; Ma, Jingrui1,3 ; Zhang, Wenda1,4 ; Liu, Pai1,2,3 ; Liu, Haochen 5; Hao, Junjie1,2,3 ; Wang, Kai1,2,3 ; Samuelson, Lars1,2,6 ; Sun, Xiao Wei1,2,3
通讯作者	Liu, Pai; Samuelson, Lars; Sun, Xiao Wei
发表日期	2022
DOI	10.1021/acsami.2c20138
发表期刊	ACS Applied Materials & Interfaces 影响因子和分区
ISSN	1944-8244
EISSN	1944-8252
卷号	15 期号:11页码:1619-1628
摘要	InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)3P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)3P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPOx defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD light-emitting diode device are also improved accordingly from 0.6% and 1276 cd·m-2 to 3.5% and 2355 cd·m-2, respectively. © ACS Applied Materials and Interfaces. All rights reserved.
关键词	indium phosphide quantum dot Cd-free oxidation defect quantum light-emitting diode
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
资助项目	The authors acknowledge the assistance of SUSTech Core Research Facilities. This work was supported by the Ministry of Science and Technology of China (nos. 2022YFB3602903, 2016YFB0401702, and 2017YFE0120400), the National Natural Science Foundation of China (nos. 61875082, 61405089, 62005115, 62204107, and 12204229), the Key-Area Research and Development Program of Guangdong Province (nos. 2019B010925001, 2019B010924001), and the Shenzhen Key Laboratory for Advanced QD Displays and Lighting (no. ZDSYS201707281632549).
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000906484700001
出版者	American Chemical Society
EI入藏号	20230113337270
EI主题词	Cadmium Compounds ; Defects ; III-V Semiconductors ; Interface States ; Nanocrystals ; Organic Light Emitting Diodes (OLED) ; Oxidation ; Quantum Efficiency ; Semiconducting Indium Phosphide ; Semiconductor Quantum Dots
EI分类号	Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices And Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Classical Physics ; Quantum Theory ; Relativity:931 ; Quantum Theory ; Quantum Mechanics:931.4 ; High Energy Physics ; Nuclear Physics ; Plasma Physics:932 ; Crystalline Solids:933.1 ; Materials Science:951
来源库	EV Compendex
引用统计	被引频次[WOS]：15
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/519749
专题	工学院_电子与电气工程系工学院_材料科学与工程系
作者单位	1.Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen; 518055, China 2.Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen; 518055, China 3.Key Laboratory of Energy Conversion and Storage Technologies, Ministry of Education, Southern University of Science and Technology, Shenzhen; 518055, China 4.Hainan Provincial Key Laboratory of Fine Chemicals, Hainan University, Haikou; 570228, China 5.Department of Materials Science and Engineering, Centre for Functional Photonics (CFP), City University of Hong Kong, 999077, Hong Kong 6.Solid State Physics and NanoLund, Lund University, Lund; 22100, Sweden
第一作者单位	电子与电气工程系; 南方科技大学
通讯作者单位	电子与电气工程系; 南方科技大学
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Duan, Xijian,Ma, Jingrui,Zhang, Wenda,et al. Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine[J]. ACS Applied Materials & Interfaces,2022,15(11):1619-1628.
APA	Duan, Xijian.,Ma, Jingrui.,Zhang, Wenda.,Liu, Pai.,Liu, Haochen.,...&Sun, Xiao Wei.(2022).Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine.ACS Applied Materials & Interfaces,15(11),1619-1628.
MLA	Duan, Xijian,et al."Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine".ACS Applied Materials & Interfaces 15.11(2022):1619-1628.