题名 | Fabrication of CMUTs Using Sacrificial Release Process with Ashing Assisted Polysilicon Release |
作者 | |
DOI | |
发表日期 | 2022
|
会议名称 | 2022 International Conference on Biomedical and Intelligent Systems, IC-BIS 2022
|
ISSN | 0277-786X
|
EISSN | 1996-756X
|
ISBN | 9781510660212
|
会议录名称 | |
卷号 | 12458
|
会议日期 | June 24, 2022 - June 26, 2022
|
会议地点 | Chengdu, China
|
会议录编者/会议主办者 | Academic Exchange Information Center (AEIC)
|
出版者 | |
摘要 | Capacitive Micromachined Ultrasonic Transducer (CMUT) is a type of ultrasonic transducer that can be applied in many fields like chemical and mechanical sensing, physical imaging, and bio-imaging. Sacrificial layer release is one of the fabrication methods and cavity releasing is the key part of this method. The stress of the sacrificial material is one of the causes making membranes break in this procedure. The previous studies had a phospho-silicide-glass (PSG) layer deposited between polysilicon sacrificial layer and silicon nitride membrane with LPCVD partially solved the problem. However, its processing temperature is relatively high, which makes it not compatible with CMOS integrated circuits (ICs). This work fabricated CMUTs in the sacrificial layer release process, with polysilicon as the main sacrificial layer. Utilizing chemical reaction of polysilicon in ashing process, a thin oxide was formed between the sacrificial layer and membrane while removing the remaining photoresist with ashing. The result showed that it could also help produce large membranes with a lower processing temperature, which can be more compatible with CMOS ICs. After fabrication, the impedance of an element with 100 µm diameter cells was measured to be several hundred ohms in air with 30 V bias voltage and the resonance frequency was 4.7 MHz. © 2022 SPIE. All rights reserved. |
学校署名 | 其他
|
语种 | 英语
|
收录类别 | |
资助项目 | This fabrication was performed at the Micro and Nanofabrication Facility at the Southern University of Science and Technology (SUSTech), Shenzhen, China. This work was funded by the National Key R&D Program of China (No. 2020YFB1313502) and funded by the Shenzhen-Hong Kong-Macau S&T Program (Category C) of SZSTI (SGDX20201103094002009) and funded by the University of Macau (File no. MYRG2019-00056-AMSV, MYRG2020-00098-FST) and funded by The Science and Technology Development Fund, Macau SAR (File no. 0144/2019/A3, 0022/2020/AFJ, SKL-AMSV (FDCT-funded), SKL-AMSV-ADDITIONAL FUND, SKL-AMSV(UM)-2020-2022).
|
EI入藏号 | 20230113327261
|
EI主题词 | CMOS integrated circuits
; Fabrication
; Photoresists
; Polycrystalline materials
; Silicides
; Silicon nitride
; Temperature
; Ultrasonic transducers
|
EI分类号 | Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3
; Thermodynamics:641.1
; Semiconductor Devices and Integrated Circuits:714.2
; Ultrasonic Devices:753.2
; Chemical Products Generally:804
; Inorganic Compounds:804.2
; Coating Materials:813.2
; Crystalline Solids:933.1
|
来源库 | EV Compendex
|
引用统计 |
被引频次[WOS]:0
|
成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/519769 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Institude of Mircroelectronic, University of Macau, Avenida da Universidade, Taipa, China 2.Department of Electrical and Computer Engineering, Faculty of Science and Technology, University of Macau, Avenida da Universidade, Taipa, China 3.Department of Electrical and Electronic Engineering, Collage of Engineering, Southern University of Science and Technology, Shenzhen, China |
推荐引用方式 GB/T 7714 |
Che, U. Kin,Liu, Xin,Yu, Yuanyu,et al. Fabrication of CMUTs Using Sacrificial Release Process with Ashing Assisted Polysilicon Release[C]//Academic Exchange Information Center (AEIC):SPIE,2022.
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论