Design of Partially Etched GaP-OI Microresonators for Two-Color Kerr Soliton Generation at NIR and MIR

Ji, Houling; Geng, Zhaoting; Cheng, Weiren; Yu, Zhuoyu; Wu, Pengzhuo; Li, Yi; Zhao, Qiancheng

10.1109/ACP55869.2022.10089110

2022

Asia Communications and Photonics Conference (ACP) / International Conference on Information Photonics and Optical Communications (IPOC)

2162-108X

978-1-6654-8156-4

2022 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE, ACP

1622-1625

NOV 05-08, 2022

So Univ Sci & Technol,Shenzhen,PEOPLES R CHINA

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

We present and theoretically investigate a dispersion engineered GaP-OI microresonator containing a partially-etched gap of 250 nm x 410 nm in a 600 nm x 2990 nm waveguide. This gap enables a 3.25 mu m wide anomalous dispersion spectral span covering both the near-infrared and the mid-infrared spectra. This anomalous dispersion is manifested by two mechanisms, being the hybridization of the fundamental TE modes around 1550 nm and the geometric dispersion of the higher order TE mode around the 3100 nm wavelengths, respectively. Two Kerr soliton combs can be numerically generated with 101 GHz and 97 GHz teeth spacings at these spectral windows. The proposed structure demonstrates the design flexibility thanks to the partially etched gap and paves the way towards potential coherent multicolor frequency comb generation in the emerging GaP-OI platform.

component GaP-OI microresonator dispersion engineering multicolor kerr soliton combs avoided mode crossing

第一 ; 通讯

英语

CPCI-S

Guangdong Basic and Applied Basic Research Foundation[2021B1515120074]

Engineering ; Optics ; Telecommunications

Engineering, Electrical & Electronic ; Optics ; Telecommunications

WOS:001000552100418

Web of Science

Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518000, Guangdong, Peoples R China

Ji, Houling,Geng, Zhaoting,Cheng, Weiren,et al. Design of Partially Etched GaP-OI Microresonators for Two-Color Kerr Soliton Generation at NIR and MIR[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2022:1622-1625.