题名 | High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials |
作者 | |
通讯作者 | Lv, Chunyan; Xu, Wangping; Wu, Xiaozhi |
发表日期 | 2023-03-01
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DOI | |
发表期刊 | |
ISSN | 1463-9076
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EISSN | 1463-9084
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卷号 | 25期号:15 |
摘要 | Recently, two-dimensional (2D) layered polarized ZnIn2S4 nanosheets have been successfully synthesized in experiments. However, the polarized monolayers are unstable in air, which hinders their practical applications. Therefore, in this work, we proposed a new family of nonpolarized monolayers (beta(2)-phase) ZnX(2)Z(4) (X = In, Al, and Ga; Z = S, Se, and Te) by first-principles. It is confirmed that the energies of beta(2)-phase ZnX(2)Z(4) are lower than those of the polarized and beta-phase ZnX(2)Z(4) monolayers. Moreover, these ZnX(2)Z(4) monolayers have not only desirable indirect band gaps but also high electron mobility (up to 10(3) cm(2) V-1 s(-1)), revealing a fascinating visible light absorption range. Furthermore, beta(2)-phase ZnX2Te4 (X = In, Al, and Ga) has ultra-low lattice thermal conductivity and high ZT value (up to 0.89), suggesting that these monolayers can be good candidates for thermoelectric materials. These new 2D ternary monolayers not only effectively broaden the family of 2D materials but also provide promising candidates for optoelectronic and thermoelectric materials. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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资助项目 | Natural Science Foundation of China["12174040","12147102","12204398","52273175"]
; Chongqing Natural Science Foundation[cstc2020jcyj-msxmX0118]
; Education Department of Hunan Province[21C0093]
; Foshan (Southern China) Institute for New Materials[2021A1515110127]
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WOS研究方向 | Chemistry
; Physics
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WOS类目 | Chemistry, Physical
; Physics, Atomic, Molecular & Chemical
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WOS记录号 | WOS:000961866500001
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出版者 | |
ESI学科分类 | CHEMISTRY
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:4
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/523988 |
专题 | 科学与工程计算中心 |
作者单位 | 1.Chongqing Univ, Inst Struct & Funct, Chongqing 401331, Peoples R China 2.Chongqing Univ, Dept Phys, Chongqing 401331, Peoples R China 3.Huzhou Univ, Dept Mat Chem, Huzhou 313000, Peoples R China 4.Xiangtan Univ, Hunan Inst Adv Sensing & Informat Technol, Xiangtan 411105, Peoples R China 5.Southern Univ Sci & Technol, Ctr Computat Sci & Engn, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 |
Shi, Li,Lv, Chunyan,Wei, Haoran,et al. High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2023,25(15).
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APA |
Shi, Li.,Lv, Chunyan.,Wei, Haoran.,Xu, Wangping.,Wang, Rui.,...&Wu, Xiaozhi.(2023).High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,25(15).
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MLA |
Shi, Li,et al."High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 25.15(2023).
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