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题名

High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials

作者
通讯作者Lv, Chunyan; Xu, Wangping; Wu, Xiaozhi
发表日期
2023-03-01
DOI
发表期刊
ISSN
1463-9076
EISSN
1463-9084
卷号25期号:15
摘要
Recently, two-dimensional (2D) layered polarized ZnIn2S4 nanosheets have been successfully synthesized in experiments. However, the polarized monolayers are unstable in air, which hinders their practical applications. Therefore, in this work, we proposed a new family of nonpolarized monolayers (beta(2)-phase) ZnX(2)Z(4) (X = In, Al, and Ga; Z = S, Se, and Te) by first-principles. It is confirmed that the energies of beta(2)-phase ZnX(2)Z(4) are lower than those of the polarized and beta-phase ZnX(2)Z(4) monolayers. Moreover, these ZnX(2)Z(4) monolayers have not only desirable indirect band gaps but also high electron mobility (up to 10(3) cm(2) V-1 s(-1)), revealing a fascinating visible light absorption range. Furthermore, beta(2)-phase ZnX2Te4 (X = In, Al, and Ga) has ultra-low lattice thermal conductivity and high ZT value (up to 0.89), suggesting that these monolayers can be good candidates for thermoelectric materials. These new 2D ternary monolayers not only effectively broaden the family of 2D materials but also provide promising candidates for optoelectronic and thermoelectric materials.
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语种
英语
学校署名
其他
资助项目
Natural Science Foundation of China["12174040","12147102","12204398","52273175"] ; Chongqing Natural Science Foundation[cstc2020jcyj-msxmX0118] ; Education Department of Hunan Province[21C0093] ; Foshan (Southern China) Institute for New Materials[2021A1515110127]
WOS研究方向
Chemistry ; Physics
WOS类目
Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS记录号
WOS:000961866500001
出版者
ESI学科分类
CHEMISTRY
来源库
Web of Science
引用统计
被引频次[WOS]:4
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/523988
专题科学与工程计算中心
作者单位
1.Chongqing Univ, Inst Struct & Funct, Chongqing 401331, Peoples R China
2.Chongqing Univ, Dept Phys, Chongqing 401331, Peoples R China
3.Huzhou Univ, Dept Mat Chem, Huzhou 313000, Peoples R China
4.Xiangtan Univ, Hunan Inst Adv Sensing & Informat Technol, Xiangtan 411105, Peoples R China
5.Southern Univ Sci & Technol, Ctr Computat Sci & Engn, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714
Shi, Li,Lv, Chunyan,Wei, Haoran,et al. High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2023,25(15).
APA
Shi, Li.,Lv, Chunyan.,Wei, Haoran.,Xu, Wangping.,Wang, Rui.,...&Wu, Xiaozhi.(2023).High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,25(15).
MLA
Shi, Li,et al."High mobility and excellent thermoelectric performance monolayer ZnX(2)Z(4) (X = In, Al, Ga; Z = S, Se, Te) materials".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 25.15(2023).
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