题名 | An integrated constrained gradient descent (iCGD) protocol to correct scan-positional errors for electron ptychography with high accuracy and precision |
作者 | |
通讯作者 | He, Qian |
发表日期 | 2023-06-01
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DOI | |
发表期刊 | |
ISSN | 0304-3991
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EISSN | 1879-2723
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卷号 | 248 |
摘要 | Correcting scan-positional errors is critical in achieving electron ptychography with both high resolution and high precision. This is a demanding and challenging task due to the sheer number of parameters that need to be optimized. For atomic-resolution ptychographic reconstructions, we found classical refining methods for scan positions not satisfactory due to the inherent entanglement between the object and scan positions, which can produce systematic errors in the results. Here, we propose a new protocol consisting of a series of constrained gradient descent (CGD) methods to achieve better recovery of scan positions. The central idea of these CGD methods is to utilize a priori knowledge about the nature of STEM experiments and add necessary constraints to isolate different types of scan positional errors during the iterative reconstruction process. Each constraint will be introduced with the help of simulated 4D-STEM datasets with known positional errors. Then the integrated constrained gradient decent (iCGD) protocol will be demonstrated using an experimental 4D-STEM dataset of the 1H-MoS2 monolayer. We will show that the iCGD protocol can effectively address the errors of scan positions across the spectrum and help to achieve electron ptychography with high accuracy and precision. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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资助项目 | National Research Foundation (NRF) Singapore[NRF-NRFF11-2019-0002]
; National Natural Science Foundation of China["11775105","12074167"]
; Singapore Ministry of Education Academic Research Fund[R-284-000-179-133]
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WOS研究方向 | Microscopy
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WOS类目 | Microscopy
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WOS记录号 | WOS:000960509300001
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出版者 | |
EI入藏号 | 20231513872072
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EI主题词 | Gradient methods
; Layered semiconductors
; Molybdenum compounds
; Systematic errors
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EI分类号 | Semiconducting Materials:712.1
; Numerical Methods:921.6
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ESI学科分类 | CHEMISTRY
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:4
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/524007 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore 2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 3.Harbin Inst Technol, Harbin 150001, Peoples R China 4.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 |
Ning, Shoucong,Xu, Wenhui,Loh, Leyi,et al. An integrated constrained gradient descent (iCGD) protocol to correct scan-positional errors for electron ptychography with high accuracy and precision[J]. ULTRAMICROSCOPY,2023,248.
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APA |
Ning, Shoucong.,Xu, Wenhui.,Loh, Leyi.,Lu, Zhen.,Bosman, Michel.,...&He, Qian.(2023).An integrated constrained gradient descent (iCGD) protocol to correct scan-positional errors for electron ptychography with high accuracy and precision.ULTRAMICROSCOPY,248.
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MLA |
Ning, Shoucong,et al."An integrated constrained gradient descent (iCGD) protocol to correct scan-positional errors for electron ptychography with high accuracy and precision".ULTRAMICROSCOPY 248(2023).
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