| 题名 | Magnetic topological transistor exploiting layer-selective transport |
| 作者 | |
| 通讯作者 | Sun, Hai-Peng |
| 发表日期 | 2023-03-14
|
| DOI | |
| 发表期刊 | |
| EISSN | 2643-1564
|
| 卷号 | 5期号:1 |
| 摘要 | We propose a magnetic topological transistor based on MnBi2Te4, in which the "on" state (quantized conductance) and the "off " state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi2Te4. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off " states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi2Te4. |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 其他
|
| 资助项目 | DFG["SPP1666","SFB1170"]
; Worzburg-Dresden Cluster of Excellence ct.qmat["EXC2147","390858490"]
; National Natural Science Foundation of China[11925402]
|
| WOS研究方向 | Physics
|
| WOS类目 | Physics, Multidisciplinary
|
| WOS记录号 | WOS:000957749500002
|
| 出版者 | |
| EI入藏号 | 20231413846968
|
| EI主题词 | Electric fields
; Terminals (electric)
; Topology
; Transistors
; Van der Waals forces
|
| EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Electric Components:704.1
; Semiconductor Devices and Integrated Circuits:714.2
; Physical Chemistry:801.4
; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4
; Mechanics:931.1
; Atomic and Molecular Physics:931.3
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：7
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/524021 |
| 专题 | 量子科学与工程研究院 理学院_物理系 |
| 作者单位 | 1.Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany 2.Univ Zurich, Dept Phys, Winterthurerstr 190, CH-8057 Zurich, Switzerland 3.Southern Univ Sci & Technol SUSTech, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China 4.Southern Univ Sci & Technol SUSTech, Dept Phys, Shenzhen 518055, Peoples R China 5.Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China 6.Wurzburg Dresden Cluster Excellence Ct Qmat, Wurzburg, Germany |
| 推荐引用方式 GB/T 7714 |
Sun, Hai-Peng,Li, Chang-An,Choi, Sang-Jun,et al. Magnetic topological transistor exploiting layer-selective transport[J]. PHYSICAL REVIEW RESEARCH,2023,5(1).
|
| APA |
Sun, Hai-Peng,Li, Chang-An,Choi, Sang-Jun,Zhang, Song-Bo,Lu, Hai-Zhou,&Trauzettel, Bjorn.(2023).Magnetic topological transistor exploiting layer-selective transport.PHYSICAL REVIEW RESEARCH,5(1).
|
| MLA |
Sun, Hai-Peng,et al."Magnetic topological transistor exploiting layer-selective transport".PHYSICAL REVIEW RESEARCH 5.1(2023).
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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