南方科技大学知识苑(SUSTech KC): Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect

题名	Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect
作者	Tang, Xingyu 1; Huang, Yixuan 1; Cheng, Keming 1; Yuan, Qi 1; Zou, Jihua 1; Li, Chuang 1; Ren, Aobo 1; Shen, Kai 1; Wang, Zhiming 1,2
通讯作者	Ren, Aobo; Shen, Kai
发表日期	2023-04-01
DOI	10.1016/j.mee.2023.111980
发表期刊	MICROELECTRONIC ENGINEERING 影响因子和分区
ISSN	0167-9317
EISSN	1873-5568
卷号	274
摘要	Two-dimensional (2D) materials have attracted an increasing attention in state-of-the-art optical sensing ap-plications. However, the performance of photodetectors based on 2D materials are limited by weak light ab-sorption, resulting in a low optical response. In this work, a highly sensitive and fast photodetector is fabricated based on WSe2/MoSe2 vertical p-n van der Waals heterojunction via an effective photogating effect. Benefiting from the good energy band alignment and photogating effect, a fast separation of photogenerated carriers and high optical gain are obtained. As a result, the photodetector exhibits a high responsivity of 1260 A/W, a specific detectivity of 6.05 x 1012 Jones, a large external quantum efficiency approaching 2.68 x 105%, and a short response time of 3.5 ms. This work provided a facile strategy for improving the device performance to meeting the increasing demand of highly sensitive light sensing devices.
关键词	WSe 2 MoSe 2 heterojunction Photogating effect Highly sensitive photodetector
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
资助项目	National Key Research and Development Program of China[2021YFA1401100] ; National Natural Science Foundation of China[52202165] ; Innovation Group Project of Sichuan Province[20CXTD0090] ; Fundamental Research Funds for the Central Universities[ZYGX2019Z018] ; UESTC Shared Research Facilities of Electromagnetic Wave and Matter Interaction[Y0301901290100201] ; Central Government Funds of Guiding Local Scientific and Technological Development for Sichuan Province[2021ZYD0023] ; Natural Science Foundation of Sichuan Province[2022NSFSC0918]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied
WOS记录号	WOS:000957049400001
出版者	ELSEVIER
EI入藏号	20231213744095
EI主题词	Light absorption ; Photodetectors ; Photons ; Van der Waals forces
EI分类号	Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3
ESI学科分类	ENGINEERING
来源库	Web of Science
引用统计	被引频次[WOS]：6
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/524038
专题	量子科学与工程研究院
作者单位	1.Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China 2.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Tang, Xingyu,Huang, Yixuan,Cheng, Keming,et al. Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect[J]. MICROELECTRONIC ENGINEERING,2023,274.
APA	Tang, Xingyu.,Huang, Yixuan.,Cheng, Keming.,Yuan, Qi.,Zou, Jihua.,...&Wang, Zhiming.(2023).Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect.MICROELECTRONIC ENGINEERING,274.
MLA	Tang, Xingyu,et al."Ultrasensitive WSe2/MoSe2 heterojunction photodetector enhanced by photogating effect".MICROELECTRONIC ENGINEERING 274(2023).