南方科技大学知识苑(SUSTech KC): Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs

题名	Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs
作者	Huang, Wenjun; Miao, Xiangyu; Liu, Zhaojun
通讯作者	Liu, Zhaojun
发表日期	2023-03-01
DOI	10.3390/mi14030566
发表期刊	MICROMACHINES 影响因子和分区
EISSN	2072-666X
卷号	14 期号:3
摘要	The optoelectronic effects of sidewall passivation on micro-light-emitting diodes (Micro-LEDs) were investigated using sol-gel chemical synthesis. Blue InGaN/GaN multi-quantum well (MQW) Micro-LEDs, ranging in size from 20 x 20 mu m to 100 x 100 mu m and with high EQE, were fabricated and distinguished by the passivation method used, including no passivation, sol-gel SiO2, and plasma-enhanced chemical vapor deposition (PECVD) SiO2. Impressively, the sol-gel method is advantageous in improving the optoelectronic performance of Micro-LEDs. The fabricated 20 x 20 mu m Micro-LEDs showed an EQE of 27.7% with sol-gel passivation, which was a 14% improvement compared to devices without sidewall passivation. Sol-gel sidewall passivation allows Micro-LEDs to effectively achieve sharper edge emission, superior surface luminous uniformity, and intensity, providing the possibility for the fabrication of low-cost and high-efficiency Micro-LEDs.
关键词	sidewall passivation sol-gel SiO2 GaN-based micro-light-emitting diodes (Micro-LEDs)
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Instruments & Instrumentation ; Physics
WOS类目	Chemistry, Analytical ; Nanoscience & Nanotechnology ; Instruments & Instrumentation ; Physics, Applied
WOS记录号	WOS:000958110300001
出版者	MDPI
EI入藏号	20231613886518
EI主题词	Gallium alloys ; Gallium nitride ; III-V semiconductors ; Indium alloys ; Light emitting diodes ; Passivation ; Plasma CVD ; Plasma enhanced chemical vapor deposition ; Semiconductor alloys ; Semiconductor quantum wells ; Silicon ; Sol-gel process ; Sol-gels
EI分类号	Protection Methods:539.2.1 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Glass:812.3 ; Coating Techniques:813.1 ; Plasma Physics:932.3
来源库	Web of Science
引用统计	被引频次[WOS]：3
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/524042
专题	工学院_电子与电气工程系
作者单位	Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
第一作者单位	电子与电气工程系
通讯作者单位	电子与电气工程系
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Huang, Wenjun,Miao, Xiangyu,Liu, Zhaojun. Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs[J]. MICROMACHINES,2023,14(3).
APA	Huang, Wenjun,Miao, Xiangyu,&Liu, Zhaojun.(2023).Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs.MICROMACHINES,14(3).
MLA	Huang, Wenjun,et al."Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs".MICROMACHINES 14.3(2023).