Improved perovskite triboelectric nanogenerators by effective defect passivation and interface modulation

Yu，Bin Bin1,2; Hu，Xuanang1,2; Wang，Haijun1; Liang，Qihua1; Wang，Liaoyu3; Wu，Yinghui1; Qin，Qi1,2; Huang，Long Biao1

2023-03-27

10.1063/5.0142055

Applied Physics Letters   影响因子和分区

0003-6951

1077-3118

Perovskite-based triboelectric nanogenerators (TENGs) have obtained wide attention and investigation due to their excellent dielectric and electrical properties, as well as the diversity of perovskite materials. In this work, phenethyl ammonium iodide (PEAI) was applied to tailor the interface of MAPbI3 films, to form a 2D/3D heterojunction, and to passivate defects of films. The TENGs after PEAI passivation achieved significant improvement in voltage and current density with an increase in the output voltage from 33.3 to 40.1 V, and the current density was improved from 9.1 to 10.1 mA/m2. The improved output properties might be attributed to changes in the triboelectric charge density, carrier mobility, reduced interfacial combination by effective defect passivation, and favorable charge transporting by constructing 2D/3D heterojunctions for the effect of the built-in electric field. This work demonstrates that interfacial modification is one of the feasible methods for improving the performance of TENGs and supplies further possibilities for high-performance perovskite-based TENGs.

SCI ; EI

英语

NI论文

其他

Guangdong Basic and Applied Basic Research Foundation["2019A1515111134","827/000544"] ; National Natural Science Foundation of China[51973119] ; High-level university construction fund[860-000002081205] ; Key Lab of Special Functional Materials of Ministry of Education, Henan University[KFKT-2022-10] ; Guangdong Provincial Key Laboratory of Durability for Marine Civil Engineering (SZU)[2020B1212060074] ; Startup funding from local government[000544]

Physics

Physics, Applied

WOS:000959687700013

AIP Publishing

20231413850780

Carrier mobility ; Defects ; Dielectric materials ; Electric fields ; Heterojunctions ; Nanogenerators ; Passivation

Minerals:482.2 ; Protection Methods:539.2.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Electric Generators:705.2 ; Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Materials Science:951

PHYSICS

2-s2.0-85151545532

Scopus

1.Key Laboratory of Optoelectronic Devices and Systems,Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen,518060,China
2.Institute of Intelligent Optical Image,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen,518060,China
3.Academy for Advanced Interdisciplinary Studies,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China

Yu，Bin Bin,Hu，Xuanang,Wang，Haijun,et al. Improved perovskite triboelectric nanogenerators by effective defect passivation and interface modulation[J]. Applied Physics Letters,2023,122(13).

Yu，Bin Bin.,Hu，Xuanang.,Wang，Haijun.,Liang，Qihua.,Wang，Liaoyu.,...&Huang，Long Biao.(2023).Improved perovskite triboelectric nanogenerators by effective defect passivation and interface modulation.Applied Physics Letters,122(13).

Yu，Bin Bin,et al."Improved perovskite triboelectric nanogenerators by effective defect passivation and interface modulation".Applied Physics Letters 122.13(2023).