Electromagnetic evolution in proton-containing spinel NiCo2 O4 thin films via ionic liquid gating

Wu，M.1; Huang，X.2; Li，Y.1; Luo，H.1; Shi，J.2; Zhang，K. H.L.2; Han，P.3; Hu，S.4; Deng，T.1; Du，Y.1; Chen，L.4; Wang，H. Q.1; Kang，J.1

2023-03-15

10.1103/PhysRevB.107.125107

Physical Review B   影响因子和分区

2469-9950

2469-9969

Proton incorporation through ionic liquid gating (ILG) has become an efficient strategy to manipulate the novel ground-state properties in complex oxides. However, the mechanisms of proton evolution and their correlations with other degrees of freedom in quantum material systems are still unclear. Herein, we provide insights into the correlated interactions among different lattice-spin-orbital-spin degrees of freedom in spinel NiCo2O4 (NCO) films with a complex local electronic configuration and coordination environments. Our results reveal that the Ni ions near the Fermi level show the prior Ni3+→Ni2+ response, whereas the Co ions at different octahedral and tetrahedral sites exhibit a stepwise Co3+→Co2+ evolution. The gradual evolutions reflected in both structure and electronic configuration aspects determine the different electronic conducting mechanisms as well as the variation of the magnetic ground states in the protonated NCO films. Our systematic structure-property investigations shed light on the fundamental understanding of the strongly correlated nature in quantum materials and the manipulation of quantum materials with desired functionalities through the ILG approach.

SCI ; EI

英语

其他

National Science Founda- tion of Fujian Province of China[2022J01007] ; National Natural Science Foundation of China["U22B20132","11972136","12174270","11704317"] ; Fundamental Research Funds for Central Universi[20720210018]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000991739600004

AMER PHYSICAL SOC

20231313809207

Conductive films ; Coordination reactions ; Degrees of freedom (mechanics) ; Ground state ; Thin films

Conducting Materials:708.2 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Mechanics:931.1

PHYSICS

2-s2.0-85150898835

Scopus

1.Engineering Research Center of Micro-nano Optoelectronic Materials and Devices,Ministry of Education,Fujian Key Laboratory of Semiconductor Materials and Applications,CI Center for OSED,Department of Physics,Xiamen University,Xiamen,361005,China
2.State Key Laboratory of Physical Chemistry of Solid Surfaces,College of Chemistry and Chemical Engineering,Xiamen University,Xiamen,361005,China
3.Department of Physics,Beijing Key Lab for Metamaterials and Devices,Capital Normal University,Beijing,100048,China
4.Department of Physics,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China

Wu，M.,Huang，X.,Li，Y.,et al. Electromagnetic evolution in proton-containing spinel NiCo2 O4 thin films via ionic liquid gating[J]. Physical Review B,2023,107(12).

Wu，M..,Huang，X..,Li，Y..,Luo，H..,Shi，J..,...&Kang，J..(2023).Electromagnetic evolution in proton-containing spinel NiCo2 O4 thin films via ionic liquid gating.Physical Review B,107(12).

Wu，M.,et al."Electromagnetic evolution in proton-containing spinel NiCo2 O4 thin films via ionic liquid gating".Physical Review B 107.12(2023).