A 33-37GHz Two-Path Power Amplifier with>18-dB Gain and 26.7-dBm Psat in 150nm GaAs Process

Zhonghao Sun1; Zhili Liu1; Tianxiang Wu1; Hao Yu2; Yong Chen3; Shunli Ma1

10.1109/PrimeAsia56064.2022.10104000

2022

2159-2144

978-1-6654-5070-6

2022 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)

64-67

11-13 Nov. 2022

Shenzhen, China

This paper presents a GaAs power amplifier (PA). Through the theoretical analysis of the small-signal modeling and large-signal analysis of GaAs transistors, the main influencing factors affecting the saturated output power and gain of a single Gaas transistor are achieved. We develop a low-loss broadband matching by using T-type matching network technology. In addition, the input matching network and the output matching network are used to realize power distribution, which solves the problems of large area and high insertion loss of the traditional power divider in GaasPA. The designed PA is based on a 0.15um GaAs process. The simulation results show that our GaasPA can achieve a saturated output power of 26.7 dBm and a gain of 18 dB in the range of 33-to-37GHz, the DC power consumption is 214 mA at a supply of 5 V, and the chip area is $1.0 \ \mathbf{mm} \ \times \ 1.45 \ \mathbf{mm}$,

Power amplifier (PA) Ka-band GaAs process parallel matching power combine

其他

IEEE

1.State Key Laboratory of ASIC and System, School of Microelectronics Fudan University, Shanghai, China
2.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
3.State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST, University of Macau, Macao, China

Zhonghao Sun,Zhili Liu,Tianxiang Wu,et al. A 33-37GHz Two-Path Power Amplifier with>18-dB Gain and 26.7-dBm Psat in 150nm GaAs Process[C],2022:64-67.