中文版 | English
题名

Type-II Dirac Nodal Lines in a Double-Kagome-Layered Semimetal

作者
通讯作者Wang, Jianfeng; Mei, Jia-Wei; Chen, Chaoyu
共同第一作者Cai, Yongqing; Wang, Jianfeng; Wang, Yuan; Hao, Zhanyang; Liu, Yixuan
发表日期
2023-04-01
DOI
发表期刊
ISSN
2199-160X
卷号9期号:7
摘要

Lorentz-violating type-II Dirac nodal line semimetals (DNLSs), hosting curves of band degeneracy formed by two dispersion branches with the same sign of slope, represent a novel state of matter. While being studied extensively in theory, convincing experimental evidence of type-II DNLSs remain elusive. Recently, vanadium-based kagome materials have emerged as a fertile ground to study the interplay between lattice symmetry and band topology. This work studies the low-energy band structure of double-kagome-layered CsV8Sb12 and identifies it as a scarce type-II DNLS protected by mirror symmetry. This work observes multiple DNLs consisting of type-II Dirac cones close to or almost at the Fermi level via angle-resolved photoemission spectroscopy (ARPES), which provides an electronic explanation for the nonsaturating magnetoresistance effect as observed. First-principles theory analyses show that spin-orbit coupling only opens a small gap, resulting in effectively gapless ARPES spectra, yet generating large spin Berry curvature. These type-II DNLs, together with the interaction between a low-energy van Hove singularity and quasi-one-dimensional band as observed in the same material, suggest CsV8Sb12 as an ideal platform for exploring novel transport properties.

关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 共同第一 ; 通讯
资助项目
National Key R&D Program of China[2022YFA1403700] ; National Natural Science Foundation of China[
WOS研究方向
Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号
WOS:000976020300001
出版者
EI入藏号
20231814041202
EI主题词
Antimony Compounds ; Band Structure ; Fruits ; Photoelectron Spectroscopy
EI分类号
Magnetism: Basic Concepts And Phenomena:701.2 ; Agricultural Products:821.4 ; Solid State Physics:933
来源库
Web of Science
引用统计
被引频次[WOS]:3
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/536127
专题量子科学与工程研究院
理学院_物理系
作者单位
1.Southern Univ Sci & Technol SUSTech, Shenzhen Inst Quantum Sci & Engn SIQSE, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol SUSTech, Dept Phys, Shenzhen 518055, Peoples R China
3.Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
4.Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China
5.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
6.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ctr Excellence Superconducting Elect, Shanghai 200050, Peoples R China
7.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
第一作者单位量子科学与工程研究院;  物理系
通讯作者单位量子科学与工程研究院;  物理系
第一作者的第一单位量子科学与工程研究院
推荐引用方式
GB/T 7714
Cai, Yongqing,Wang, Jianfeng,Wang, Yuan,et al. Type-II Dirac Nodal Lines in a Double-Kagome-Layered Semimetal[J]. ADVANCED ELECTRONIC MATERIALS,2023,9(7).
APA
Cai, Yongqing.,Wang, Jianfeng.,Wang, Yuan.,Hao, Zhanyang.,Liu, Yixuan.,...&Chen, Chaoyu.(2023).Type-II Dirac Nodal Lines in a Double-Kagome-Layered Semimetal.ADVANCED ELECTRONIC MATERIALS,9(7).
MLA
Cai, Yongqing,et al."Type-II Dirac Nodal Lines in a Double-Kagome-Layered Semimetal".ADVANCED ELECTRONIC MATERIALS 9.7(2023).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可 操作
Cai 等 - Type-II Dira(6405KB)----限制开放--
个性服务
原文链接
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
导出为Excel格式
导出为Csv格式
Altmetrics Score
谷歌学术
谷歌学术中相似的文章
[Cai, Yongqing]的文章
[Wang, Jianfeng]的文章
[Wang, Yuan]的文章
百度学术
百度学术中相似的文章
[Cai, Yongqing]的文章
[Wang, Jianfeng]的文章
[Wang, Yuan]的文章
必应学术
必应学术中相似的文章
[Cai, Yongqing]的文章
[Wang, Jianfeng]的文章
[Wang, Yuan]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
[发表评论/异议/意见]
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。