Foundry manufacturing of tight-confinement, dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuits

Ye, Zhichao; Jia, Haiyan; Huang, Zhangjun; Shen, Chen1,2,3; Long, Jinbao1,2,3; Shi, Baoqi1,4; Luo, Yi-Han1,2,3; Gao, Lan1,2,3; Sun, Wei1; Guo, Hairun5; He, Jijun; Liu, Junqiu1,6,7

2023-04-01

10.1364/PRJ.486379

PHOTONICS RESEARCH   影响因子和分区

2327-9125

The foundry development of integrated photonics has revolutionized today's optical interconnect and datacenters. Over the last decade, we have witnessed the rising of silicon nitride (Si3N4) integrated photonics, which is currently transferring from laboratory research to foundry manufacturing. The development and transition are triggered by the ultimate need for low optical loss offered by Si3N4, which is beyond the reach of silicon and III-V semiconductors. Combined with modest Kerr nonlinearity, tight optical confinement, and dispersion engineering, Si3N4 has today become the leading platform for linear and Kerr nonlinear photonics, and it has enabled chip-scale lasers featuring ultralow noise on par with table-top fiber lasers. However, so far all the reported fabrication processes of tight-confinement, dispersion-engineered Si3N4 photonic integrated circuits (PICs) with optical loss down to few dB/m have only been developed on 4-inch (100 mm diameter) or smaller wafers. Yet, to transfer these processes to established CMOS foundries that typically operate 6-inch or even larger wafers, challenges remain. In this work, we demonstrate the first foundry-standard fabrication process of Si3N4 PICs with only 2.6 dB/m loss, thickness above 800 nm, and near 100% fabrication yield on 6-inch (150 mm diameter) wafers. Such thick and ultralow-loss Si3N4 PIC enables low-threshold generation of soliton frequency combs. Merging with advanced heterogeneous integration, active ultralow-loss Si3N4 integrated photonics could pave an avenue to addressing future demands in our increasingly information-driven society. (c) 2023 Chinese Laser Press

SCI ; EI

英语

其他

Guangdong Provincial Key Laboratory[2019B121203002] ; Hetao Shenzhen-Hong Kong Science and Technology Innovation Cooperation Zone Project[HZQB-KCZYB-2020050] ; China Postdoctoral Science Foundation[2022M721482] ; National Natural Science Foundation of China[12261131503]

Optics

Optics

WOS:000972721300008

CHINESE LASER PRESS

20231814040377

Foundries ; III-V semiconductors ; Industrial research ; Nonlinear optics ; Photonic devices ; Photonic integration technology ; Semiconductor lasers ; Silicon nitride ; Silicon photonics ; Silicon wafers ; Timing circuits

Foundries:534.1 ; Semiconducting Materials:712.1 ; Pulse Circuits:713.4 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nonlinear Optics:741.1.1 ; Optical Devices and Systems:741.3 ; Solid State Lasers:744.4 ; Semiconductor Lasers:744.4.1 ; Inorganic Compounds:804.2 ; Engineering Research:901.3 ; Industrial Engineering:912.1

Web of Science

1.Qaleido Photon, Hangzhou 310000, Peoples R China
2.Int Quantum Acad, Shenzhen 518048, Peoples R China
3.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
4.Univ Sci & Technol China, Dept Opt & Opt Engn, Hefei 230026, Peoples R China
5.Shanghai Univ, Key Lab Specialty Fiber Opt & Opt Access Networks, Shanghai 200444, Peoples R China
6.Nanjing Univ Aeronaut & Astronaut, Key Lab Radar Imaging & Microwave Photon, Minist Educ, Nanjing 210016, Peoples R China
7.Univ Sci & Technol China, Hefei Natl Lab, Hefei 230088, Peoples R China

Ye, Zhichao,Jia, Haiyan,Huang, Zhangjun,et al. Foundry manufacturing of tight-confinement, dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuits[J]. PHOTONICS RESEARCH,2023,11(4):558-568.

Ye, Zhichao.,Jia, Haiyan.,Huang, Zhangjun.,Shen, Chen.,Long, Jinbao.,...&Liu, Junqiu.(2023).Foundry manufacturing of tight-confinement, dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuits.PHOTONICS RESEARCH,11(4),558-568.

Ye, Zhichao,et al."Foundry manufacturing of tight-confinement, dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuits".PHOTONICS RESEARCH 11.4(2023):558-568.