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题名

Dielectric Metalens by Multilayer Nanoimprint Lithography and Solution Phase Epitaxy

作者
通讯作者Srivastava, Abhishek Kumar
发表日期
2023-05-01
DOI
发表期刊
ISSN
1438-1656
EISSN
1527-2648
卷号25期号:16
摘要
Metasurfaces have ushered in a huge development for their superior ability in manipulating light properties including phase, amplitude, and polarization, which show great potential as alternatives for the refractive optical devices. Recently, many applications of metasurface including metalens have been proposed and investigated, aiming at substituting their refractive counterparts. However, the commonly used fabrication approaches employ electron-beam lithography (EBL) followed by dry etching or atomic layer deposition (ALD) of dielectric materials, which are expensive and inefficient. Besides, dry etching of dielectric materials at sub-100 nm scale with a high aspect ratio is challenging. Herein, a new approach for dielectric metalens fabrication is presented, which combines multilayer nanoimprint lithography and solution phase epitaxy. High aspect ratio ZnO nanopillars with a height-to-diameter ratio of over 7:1 are demonstrated. By using the multilayer nanoimprint lithography, increased aspect ratio nanostructures from shallow imprinting molds are obtained. The highly anisotropic growth characteristic enables nanopillars to grow at a height that exceeds the resist thickness. With this ability, ZnO metalenses are fabricated where the height of nanopillar reaches 1.1 mu m, achieving a focusing efficiency of 50%. The process is cost-effective with a high throughput, which can be widely used for many optical applications.
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一
资助项目
Department of Science and Technology of Guangdong Province[2020B0101030001] ; Shenzhen Science and Technology Innovation Committee[JSGG20210420091600002] ; Shenzhen Key Laboratory for Nanoimprint Technology[ZDSYS20140509142721431]
WOS研究方向
Materials Science
WOS类目
Materials Science, Multidisciplinary
WOS记录号
WOS:000986304100001
出版者
EI入藏号
20232014089980
EI主题词
Aspect ratio ; Atomic layer deposition ; Cost effectiveness ; Dielectric materials ; Dry etching ; Electron beam lithography ; II-VI semiconductors ; Nanoimprint lithography ; Nanostructures ; Zinc oxide
EI分类号
Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Reproduction, Copying:745.2 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Industrial Economics:911.2 ; Solid State Physics:933 ; Crystal Growth:933.1.2
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:8
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/536336
专题工学院_材料科学与工程系
作者单位
1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong 999077, Peoples R China
第一作者单位材料科学与工程系
第一作者的第一单位材料科学与工程系
推荐引用方式
GB/T 7714
Quan, Dunhang,Liu, Xuan,Tang, Yutao,et al. Dielectric Metalens by Multilayer Nanoimprint Lithography and Solution Phase Epitaxy[J]. ADVANCED ENGINEERING MATERIALS,2023,25(16).
APA
Quan, Dunhang.,Liu, Xuan.,Tang, Yutao.,Liu, Hongjun.,Min, Siyi.,...&Cheng, Xing.(2023).Dielectric Metalens by Multilayer Nanoimprint Lithography and Solution Phase Epitaxy.ADVANCED ENGINEERING MATERIALS,25(16).
MLA
Quan, Dunhang,et al."Dielectric Metalens by Multilayer Nanoimprint Lithography and Solution Phase Epitaxy".ADVANCED ENGINEERING MATERIALS 25.16(2023).
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