题名 | Dielectric Metalens by Multilayer Nanoimprint Lithography and Solution Phase Epitaxy |
作者 | |
通讯作者 | Srivastava, Abhishek Kumar |
发表日期 | 2023-05-01
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DOI | |
发表期刊 | |
ISSN | 1438-1656
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EISSN | 1527-2648
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卷号 | 25期号:16 |
摘要 | Metasurfaces have ushered in a huge development for their superior ability in manipulating light properties including phase, amplitude, and polarization, which show great potential as alternatives for the refractive optical devices. Recently, many applications of metasurface including metalens have been proposed and investigated, aiming at substituting their refractive counterparts. However, the commonly used fabrication approaches employ electron-beam lithography (EBL) followed by dry etching or atomic layer deposition (ALD) of dielectric materials, which are expensive and inefficient. Besides, dry etching of dielectric materials at sub-100 nm scale with a high aspect ratio is challenging. Herein, a new approach for dielectric metalens fabrication is presented, which combines multilayer nanoimprint lithography and solution phase epitaxy. High aspect ratio ZnO nanopillars with a height-to-diameter ratio of over 7:1 are demonstrated. By using the multilayer nanoimprint lithography, increased aspect ratio nanostructures from shallow imprinting molds are obtained. The highly anisotropic growth characteristic enables nanopillars to grow at a height that exceeds the resist thickness. With this ability, ZnO metalenses are fabricated where the height of nanopillar reaches 1.1 mu m, achieving a focusing efficiency of 50%. The process is cost-effective with a high throughput, which can be widely used for many optical applications. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 第一
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资助项目 | Department of Science and Technology of Guangdong Province[2020B0101030001]
; Shenzhen Science and Technology Innovation Committee[JSGG20210420091600002]
; Shenzhen Key Laboratory for Nanoimprint Technology[ZDSYS20140509142721431]
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WOS研究方向 | Materials Science
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WOS类目 | Materials Science, Multidisciplinary
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WOS记录号 | WOS:000986304100001
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出版者 | |
EI入藏号 | 20232014089980
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EI主题词 | Aspect ratio
; Atomic layer deposition
; Cost effectiveness
; Dielectric materials
; Dry etching
; Electron beam lithography
; II-VI semiconductors
; Nanoimprint lithography
; Nanostructures
; Zinc oxide
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EI分类号 | Dielectric Materials:708.1
; Semiconducting Materials:712.1
; Reproduction, Copying:745.2
; Nanotechnology:761
; Chemical Reactions:802.2
; Inorganic Compounds:804.2
; Coating Techniques:813.1
; Industrial Economics:911.2
; Solid State Physics:933
; Crystal Growth:933.1.2
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ESI学科分类 | MATERIALS SCIENCE
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:8
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/536336 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong 999077, Peoples R China |
第一作者单位 | 材料科学与工程系 |
第一作者的第一单位 | 材料科学与工程系 |
推荐引用方式 GB/T 7714 |
Quan, Dunhang,Liu, Xuan,Tang, Yutao,et al. Dielectric Metalens by Multilayer Nanoimprint Lithography and Solution Phase Epitaxy[J]. ADVANCED ENGINEERING MATERIALS,2023,25(16).
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APA |
Quan, Dunhang.,Liu, Xuan.,Tang, Yutao.,Liu, Hongjun.,Min, Siyi.,...&Cheng, Xing.(2023).Dielectric Metalens by Multilayer Nanoimprint Lithography and Solution Phase Epitaxy.ADVANCED ENGINEERING MATERIALS,25(16).
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MLA |
Quan, Dunhang,et al."Dielectric Metalens by Multilayer Nanoimprint Lithography and Solution Phase Epitaxy".ADVANCED ENGINEERING MATERIALS 25.16(2023).
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条目包含的文件 | 条目无相关文件。 |
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