In situ growth of perovskite single-crystal thin films with low trap density

Wang，Zhaojin1,2; Shan，Chengwei2; Liu，Chenxi2; Tang，Xiaobing2; Luo，Dengfeng2,6; Tang，Haodong2; Song，Zhulu2; Wang，Jiawei2; Ren，Zhenwei2,4; Ma，Jingrui2; Wang，Haoran2; Sun，Jiayun2,4; Zhang，Nan6; Choy，Wallace C.H.4; Liu，Yanjun2; Kyaw，Aung Ko Ko2; Sun，Xiao Wei2,5; Wu，Dan3; Wang，Kai2,5

2023-04-19

10.1016/j.xcrp.2023.101363

Cell Reports Physical Science   影响因子和分区

2666-3864

Developing in situ-grown perovskite single-crystal thin films (PeSCTFs) on transport layers is essential to achieve high-performance optoelectronic devices. However, it remains a challenge to grow PeSCTFs in situ with a high area-to-thickness ratio and low trap density. Here, we propose a new strategy of gradient heating nucleation and room-temperature growth. Gradient heating nucleation helps to overcome the high nucleation energy barrier and reduce the number of crystal nuclei, and room-temperature growth helps reduce the crystal growth rate and aims at an orderly deposition and diffusion of atoms for in situ growth of PeSCTFs with high quality. Consequently, the fabricated FAPbBr PeSCTF achieves a record area-to-thickness ratio of 1.84 × 10 mm and a low trap density of 3.76 × 10 cm. Moreover, the proposed strategy is also shown to be a universal method for in situ growth of other kinds of PeSCTFs on multiple transport layers.

crystal nucleation and growth low trap density perovskite single-crystal thin films photodetector stability

SCI

英语

通讯

Basic and Applied Basic Research Foundation of Guangdong Province[2022A1515011071];National Key Research and Development Program of China[2022YFB3606504];National Natural Science Foundation of China[61905107];National Natural Science Foundation of China[62122034];

Chemistry ; Energy & Fuels ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Energy & Fuels ; Materials Science, Multidisciplinary ; Physics, Multidisciplinary

WOS:000997177700001

CELL PRESS

2-s2.0-85152746889

Scopus

1.Harbin Institute of Technology,Harbin,150001,China
2.Institute of Nanoscience and Applications and Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.College of New Materials and New Energies,Shenzhen Technology University,Shenzhen,518118,China
4.Department of Electrical and Electronic Engineering,The University of Hong Kong,Hong Kong,Pokfulam Road,Hong Kong
5.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Shenzhen,518055,China
6.Peng Cheng Laboratory (PCL),Shenzhen,518055,China

Wang，Zhaojin,Shan，Chengwei,Liu，Chenxi,et al. In situ growth of perovskite single-crystal thin films with low trap density[J]. Cell Reports Physical Science,2023,4(4).

Wang，Zhaojin.,Shan，Chengwei.,Liu，Chenxi.,Tang，Xiaobing.,Luo，Dengfeng.,...&Wang，Kai.(2023).In situ growth of perovskite single-crystal thin films with low trap density.Cell Reports Physical Science,4(4).

Wang，Zhaojin,et al."In situ growth of perovskite single-crystal thin films with low trap density".Cell Reports Physical Science 4.4(2023).