A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)

Cheng，Hongyu1,2; Li，Wenmao1,2; Wang，Peiran1,2; Chen，Jianguo3; Wang，Qing1,2; Yu，Hongyu1,2

2023-04-01

10.3390/cryst13040650

Crystals   影响因子和分区

2073-4352

Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky barrier diode (SBD) was added to the source contact area, the top of the current spreading region, of a trench-etched double-diffused SiC MOS (TED MOS). Two types of SBD structures were optimized to improve the electrical properties using 3D simulation software, “TCAD Silvaco”. During reverse recovery simulation, the carriers of the device were withdrawn from the SBD, indicating that the new design was effective. It also showed that the recovery properties of the new design depended on temperature, carrier lifetime, and the work functions of metals. All the new designs were evaluated in various circumstances to determine the trend. Ultimately, in high-speed switching circuits, the SiC TED MOS with SBD structure efficiently boosted switching speed, while reducing switching loss.

reverse recovery Schottky contact TED MOS

SCI

英语

第一 ; 通讯

National Natural Science Foundation of China[62274082];Shenzhen Science and Technology Innovation Program[JSGG2022 0831094404008];

Crystallography ; Materials Science

Crystallography ; Materials Science, Multidisciplinary

WOS:000979312100001

MDPI

2-s2.0-85156253366

Scopus

1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
2.The Key Laboratory of the Third Generation Semiconductor,Southern University of Science and Technology,Shenzhen,518055,China
3.Founder Microelectronics International Co.,Ltd.,Shenzhen,518116,China

Cheng，Hongyu,Li，Wenmao,Wang，Peiran,et al. A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)[J]. Crystals,2023,13(4).

Cheng，Hongyu,Li，Wenmao,Wang，Peiran,Chen，Jianguo,Wang，Qing,&Yu，Hongyu.(2023).A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD).Crystals,13(4).

Cheng，Hongyu,et al."A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)".Crystals 13.4(2023).