Perovskite/GaAs-nanowire hybrid structure photodetectors with ultrafast multiband response enhancement by band engineering

Hou，Xiaobing1; Hong，Xitong2; Lin，Fengyuan1; Cui，Jinzhi1; Dai，Qian3; Tian，Qianlei2; Meng，Bingheng1; Liu，Yanjun4; Tang，Jilong1,5; Li，Kexue1; Liao，Lei2; Wei，Zhipeng1

2023-04-01

10.1364/PRJ.480612

Photonics Research   影响因子和分区

2327-9125

We developed a hybrid structure photodetector combining one-dimensional (1D) inorganic GaAs nanowires and two-dimensional (2D) organic perovskite materials, which can achieve various performance enhancements using a relatively simple structure. Via the optical absorption enhancement of perovskite and the type-II energy band structure formed by the heterostructure, the responsivity and detectivity of the photodetector from ultraviolet (UV) to visible (Vis) wavelengths are significantly enhanced, reaching 75 A/W and 1.49 × 1011 Jones, respectively. The response time of the photodetector was significantly decreased by 3 orders, from 785 ms to 0.5 ms, and the dark current was further reduced to 237 fA. A photodetector was prepared with enhanced responsivity and ultrafast response time in the multiband region from the UV to Vis wavelength. To the best of our knowledge, this is the first time to combine inorganic III-V GaAs nanomaterials with organic perovskite materials, which verifies the effective combination of inorganic and organic materials in a mixed dimension. The excellent photoelectric performance of the perovskite/GaAs-nanowire hybrid structure photodetector makes it a potential candidate material for a wide range of photoelectric applications such as multiband photodetection.

SCI ; EI

英语

其他

WOS:000972721300006

20231814040101

Band structure ; Gallium arsenide ; Hybrid materials ; III-V semiconductors ; Light absorption ; Perovskite ; Photoelectricity ; Photons ; Semiconducting gallium

Minerals:482.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Single Element Semiconducting Materials:712.1.1 ; Light/Optics:741.1 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933

2-s2.0-85154066618

Scopus

1.State Key Laboratory of High Power Semiconductor Lasers,College of Physics,Changchun University of Science and Technology,Changchun,130022,China
2.State Key Laboratory for Chemo/Biosensing and Chemometrics,College of Semiconductors (College of Integrated Circuits),Hunan University,Changsha,410082,China
3.Department of Laser Photoelectric Technology,Southwest Institute of Technical Physics,Chengdu,610041,China
4.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
5.Zhongshan Institute of Changchun University of Science and Technology,Zhongshan,442000,China

Hou，Xiaobing,Hong，Xitong,Lin，Fengyuan,et al. Perovskite/GaAs-nanowire hybrid structure photodetectors with ultrafast multiband response enhancement by band engineering[J]. Photonics Research,2023,11(4):541-548.

Hou，Xiaobing.,Hong，Xitong.,Lin，Fengyuan.,Cui，Jinzhi.,Dai，Qian.,...&Wei，Zhipeng.(2023).Perovskite/GaAs-nanowire hybrid structure photodetectors with ultrafast multiband response enhancement by band engineering.Photonics Research,11(4),541-548.

Hou，Xiaobing,et al."Perovskite/GaAs-nanowire hybrid structure photodetectors with ultrafast multiband response enhancement by band engineering".Photonics Research 11.4(2023):541-548.