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题名

Dual Surface Modifications of NiOx/Perovskite Interface for Enhancement of Device Stability

作者
通讯作者Ng,Alan Man Ching; Djurišić,Aleksandra B.
发表日期
2023
DOI
发表期刊
ISSN
1944-8244
EISSN
1944-8252
卷号15期号:20页码:24437-24447
摘要
Various phosphonic acid based self-assembled monolayers (SAMs) have been commonly used for interface modifications in inverted perovskite solar cells. This typically results in significant enhancement of the hole extraction and consequent increase in the power conversion efficiency. However, the surface coverage and packing density of SAM molecules can vary, depending on the chosen SAM material and underlying oxide layer. In addition, different SAM molecules have diverse effects on the interfacial energy level alignment and perovskite film growth, resulting in complex relationships between surface modification, efficiency, and lifetime. Here we show that ethanolamine surface modification combined with [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz) results in significant improvement in device stability compared to devices with 2PACz modification only. The significantly smaller size of ethanolamine enables it to fill any gaps in 2PACz coverage and provide improved interfacial defect passivation, while its different chemical structure enables it to provide complementary effects to 2PACz passivation. Consequently, the perovskite films are more stable under illumination (slower photoinduced segregation), and the devices exhibit significant stability enhancement. Despite similar power conversion efficiencies (PCE) between 2PACz only and combined ethanolamine-2PACz modification (PCE of champion devices ∼21.6-22.0% for rigid and ∼20.2-21.0% for flexible devices), the T lifetime under simulated solar illumination in ambient is improved more than 15 times for both rigid and flexible devices.
关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
通讯
资助项目
Croatian Science Foundation[PZS-2019-02-2068] ; NSFC[6207032617] ; University of Hong Kong, RGC CRF project[7018-20G]
WOS研究方向
Science & Technology - Other Topics ; Materials Science
WOS类目
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000985649400001
出版者
EI入藏号
20232114117362
EI主题词
Conversion efficiency ; Film growth ; Molecules ; Organic acids ; Passivation ; Perovskite ; Perovskite solar cells ; Stability
EI分类号
Minerals:482.2 ; Energy Conversion Issues:525.5 ; Protection Methods:539.2.1 ; Solar Cells:702.3 ; Organic Compounds:804.1 ; Atomic and Molecular Physics:931.3
Scopus记录号
2-s2.0-85159613398
来源库
Scopus
引用统计
被引频次[WOS]:12
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/536767
专题理学院_物理系
科学与工程计算中心
作者单位
1.Department of Physics,The University of Hong Kong,Pokfulam Road,Hong Kong
2.Department of Physics,Southern University of Science and Technology,Shenzhen,No. 1088, Xueyuan Road, Guangdong,518055,China
3.Department of Electronic and Information Engineering,The Hong Kong Polytechnic University,Hung Hom,11 Yuk Choi Road,Hong Kong
4.Department of Physics,The Hong Kong University of Science and Technology,Clearwater Bay,Hong Kong
5.Ruđer Bošković Institute,Zagreb,Bijenička 54,10000,Croatia
6.Center for Computational Science and Engineering,Southern University of Science and Technology,Shenzhen,No. 1088, Xueyuan Road, Guangdong,518055,China
第一作者单位物理系
通讯作者单位物理系
推荐引用方式
GB/T 7714
Lin,Jingyang,Wang,Yantao,Khaleed,Abdul,et al. Dual Surface Modifications of NiOx/Perovskite Interface for Enhancement of Device Stability[J]. ACS Applied Materials and Interfaces,2023,15(20):24437-24447.
APA
Lin,Jingyang.,Wang,Yantao.,Khaleed,Abdul.,Syed,Ali Asgher.,He,Yanling.,...&Djurišić,Aleksandra B..(2023).Dual Surface Modifications of NiOx/Perovskite Interface for Enhancement of Device Stability.ACS Applied Materials and Interfaces,15(20),24437-24447.
MLA
Lin,Jingyang,et al."Dual Surface Modifications of NiOx/Perovskite Interface for Enhancement of Device Stability".ACS Applied Materials and Interfaces 15.20(2023):24437-24447.
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