Enhance Gate Reliability and Threshold Voltage Stability of p-GaN Gate High-Electron-Mobility Transistors

Chen，Haohao; Chen，Junting; Wang，Chengcai; Jiang，Zuoheng; Hua，Mengyuan

10.1109/EDTM55494.2023.10103019

2023

7th IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

979-8-3503-3253-7

7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

1-3

7-10 March 2023

Seoul, Korea, Republic of

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

Gate reliability and threshold voltage instability issues were investigated in the enhancement-mode p-GaN gate high-electron-mobility transistors (HEMTs). A n-GaN/ p-GaN gate structure is proposed to effectively reduce the gate leakage and enlarge the gate swing of the p-GaN gate HEMTs. The VTH tunability and stability of the p-GaN gate HEMTs are also systematically investigated. With a p- FET bridge, wide range VTH can be achieved, as well as eliminated hole-deficiency-induced VTH shifts.

GaN HEMT gate reliability p-GaN VTHstability

第一 ; 通讯

英语

CPCI-S ; EI

National Natural Science Foundation of China[61904078] ; Guangdong Basic and Applied Basic Research Foundation[2022A1515010115]

Engineering

Engineering, Electrical & Electronic

WOS:001004185500088

20231914074833

Computer circuits ; Electron mobility ; Gallium nitride ; High electron mobility transistors ; III-V semiconductors ; Threshold voltage

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Circuits:721.3

2-s2.0-85158114683

Scopus

Southern University of Science and Technology,Department of Eee,Shenzhen,China

Chen，Haohao,Chen，Junting,Wang，Chengcai,et al. Enhance Gate Reliability and Threshold Voltage Stability of p-GaN Gate High-Electron-Mobility Transistors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2023:1-3.