题名 | Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules |
作者 | |
通讯作者 | Qiu,Longbin |
发表日期 | 2023
|
DOI | |
发表期刊 | |
EISSN | 2198-3844
|
卷号 | 10期号:19 |
摘要 | Stability and scalability are essential and urgent requirements for the commercialization of perovskite solar cells (PSCs), which are retarded by the non-ideal interface leading to non-radiative recombination and degradation. Extensive efforts are devoted to reducing the defects at the perovskite surface. However, the effects of the buried interface on the degradation and non-radiative recombination need to be further investigated. Herein, an omnibearing strategy to modify buried and top surfaces of perovskite film to reduce interfacial defects, by incorporating aluminum oxide (AlO) as a dielectric layer and growth scaffolds (buried surface) and phenethylammonium bromide as a passivation layer (buried and top surfaces), is demonstrated. Consequently, the open-circuit voltage is extensively boosted from 1.02 to 1.14 V with the incorporation of AlO filling the voids between grains, resulting in dense morphology of buried interface and reduced recombination centers. Finally, the impressive efficiencies of 23.1% (0.1 cm) and 22.4% (1 cm) are achieved with superior stability, which remain 96% (0.1 cm) and 89% (1 cm) of its initial performance after 1200 (0.1 cm) and 2500 h (1 cm) illumination, respectively. The dual modification provides a universal method to reduce interfacial defects, revealing a promising prospect in developing high-performance PSCs and modules. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | National Natural Science Foundation of China[22109067]
; Guangdong Provincial Science and Technology Program[2022A1515010085]
; Guangdong Grants["2021ZT09C064","2021QN02L138"]
; Shenzhen Science and Technology Program[JCYJ20220530115013029]
|
WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
|
WOS类目 | Chemistry, Multidisciplinary
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
|
WOS记录号 | WOS:000976071100001
|
出版者 | |
EI入藏号 | 20231714009115
|
EI主题词 | Alumina
; Aluminum oxide
; Cell engineering
; Morphology
; Open circuit voltage
; Passivation
; Perovskite
; Scaffolds (biology)
|
EI分类号 | Biomedical Engineering:461.1
; Minerals:482.2
; Protection Methods:539.2.1
; Solar Cells:702.3
; Inorganic Compounds:804.2
; Physical Properties of Gases, Liquids and Solids:931.2
; Materials Science:951
|
Scopus记录号 | 2-s2.0-85153340600
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:28
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/536848 |
专题 | 工学院_机械与能源工程系 工学院_碳中和能源研究院 |
作者单位 | SUSTech Energy Institute for Carbon Neutrality,Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China |
第一作者单位 | 机械与能源工程系; 碳中和能源研究院 |
通讯作者单位 | 机械与能源工程系; 碳中和能源研究院 |
第一作者的第一单位 | 机械与能源工程系; 碳中和能源研究院 |
推荐引用方式 GB/T 7714 |
Li,Huan,Xie,Guanshui,Wang,Xin,et al. Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules[J]. Advanced Science,2023,10(19).
|
APA |
Li,Huan.,Xie,Guanshui.,Wang,Xin.,Li,Sibo.,Lin,Dongxu.,...&Qiu,Longbin.(2023).Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules.Advanced Science,10(19).
|
MLA |
Li,Huan,et al."Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules".Advanced Science 10.19(2023).
|
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