Atomic-scale and Damage-free Smoothing of β-Ga2O3via Plasma-induced Atom Migration Manufacturing (PAMM)

Zhang，Yongjie1,2; Yi，Rong1; Liu，Wang1; Li，Rulin1; Deng，Hui1

10.1109/Nanoman-AETS56035.2022.10119514

2022

978-1-6654-7605-8

nanoMan 2022 and AETS 2022 - 2022 8th International Conference on Nanomanufacturing and 4th AET Symposium on ACSM and Digital Manufacturing

1-5

30 Aug.-1 Sept. 2022

Dublin, Ireland

β-Ga2O3 is an emerging next-generation ultra-wide bandgap semiconductor that shows great application potentials in high-power, high-frequency, and high-temperature electronic devices. However, its atomic-scale smoothing is a troublesome issue due to the natural difficult-to-machine feature. Herein, we proposed a damage-free technique to achieve the atomic-scale smoothing of β-Ga2O3 using atmospheric pressure inductively coupled plasma (ICP). It is found that the high-temperature pure Ar ICP can impel surface atoms to migrate on β-Ga2O3, thus leading to the formation of atomically smooth surface following the decrease of surface energy, which is called plasma-induced atom migration manufacturing (PAMM). After the treatment at 900 W for 40 min, the Sa surface roughness dramatically decreases from 15.3 nm to 0.43 nm, and atomic-scale step-terrace structures can be observed on the atomically smooth substrate. Additionally, the crystal quality of β-Ga2O3 after PAMM is found to be greatly improved. We believe this novel PAMM technique can provide new sights into the nanomanufacturing research towards next-generation semiconductors and further promote the development of β-Ga2O3-based electronic devices.

atom migration atomic-scale smoothing next-generation semiconductor plasma

第一 ; 通讯

英语

2-s2.0-85160509675

Scopus

1.Southern University of Science and Technology,Department of Mechanical and Energy Engineering,Shenzhen,Guangdong,518055,China
2.National University of Singapore,Department of Physics,Singapore,117551,Singapore

Zhang，Yongjie,Yi，Rong,Liu，Wang,et al. Atomic-scale and Damage-free Smoothing of β-Ga2O3via Plasma-induced Atom Migration Manufacturing (PAMM)[C],2022:1-5.