Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Deng, Chenkai1,2; Cheng, Wei-Chih1; Chen, XiGuang1; Wen, KangYao1,3; He, MingHao1,4; Tang, ChuYing1,2; Wang, Peiran1; Wang, Qing1,5,6; Yu, HongYu1,5,6

2023-06-05

10.1063/5.0135074

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

In this work, a dramatic reduction in current collapse is achieved in GaN-based high-electron-mobility transistors (HEMTs) using dual-layer SiNx stressor passivation (DSSP), and the related mechanism is proposed. The SiNx compression neutralizes the inherent piezo polarization caused by the lattice mismatch at the heterojunction and effectively mitigates the peak electric field crowding at the drain-side gate edge, as supported by technology computer-aided design simulation. Thus, the inverse piezoelectric effect is suppressed and the trapped charge density is reduced under high electrical stress. As a result, the current collapse effect can be significantly restrained. Upon pulsing (V-g = -6 and V-ds = 20 V), the device with DSSP exhibits a negligible current collapse (similar to 3%), which is significantly lower than the baseline device (similar to 34%). Moreover, it shows a one-order-of-magnitude reduction in gate leakage and a significant enhancement in gate stability. These results prove that the DSSP process is an attractive technique to facilitate high-reliability GaN-on-Si HEMTs.

SCI ; EI

英语

NI论文

第一 ; 通讯

Fabrication of Normally-Off GaN Devices based on In situ SiNx Passivation and Selective Area Growth Recessed-Gate Techniques and the Reliability Study (National Natural Science Foundation of China)[62274082] ; Research on the Fabrication and Mechanism of GaN Power and RF Devices[JCYJ20200109141233476] ; Research on the GaN Chip for 5G Applications[JCYJ20210324120409025] ; Preparation and Mechanism Study of Novel Low Resistance Source/Drain Ohmic Electrodes Applied in~GaN p-FET Devices[JCYJ20220530115411025] ; Research on High-Reliable GaN Power Device and Related Industrial Power System[HZQB-KCZYZ-2021052]

Physics

Physics, Applied

WOS:001004596300003

AIP Publishing

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen, Peoples R China
2.Harbin Inst Technol, Sch Energy Sci & Engn, Harbin 150001, Peoples R China
3.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
4.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore, Singapore
5.Southern Univ Sci & Technol, Minist Educ, Engn Res Ctr Integrated Circuits Next Generat Comm, Shenzhen, Peoples R China
6.Southern Univ Sci & Technol, GaN Device Engn Technol Res Ctr Guangdong, Shenzhen, Peoples R China

Deng, Chenkai,Cheng, Wei-Chih,Chen, XiGuang,et al. Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation[J]. APPLIED PHYSICS LETTERS,2023,122(23).

Deng, Chenkai.,Cheng, Wei-Chih.,Chen, XiGuang.,Wen, KangYao.,He, MingHao.,...&Yu, HongYu.(2023).Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation.APPLIED PHYSICS LETTERS,122(23).

Deng, Chenkai,et al."Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation".APPLIED PHYSICS LETTERS 122.23(2023).