一种基于柔性衬底的GaN基激光器与HEMT的器件转移制备方法

田朋飞; 闫春辉; 钱泽渊; 方志来; 张国旗

田朋飞

深圳第三代半导体研究院

深圳第三代半导体研究院

518055 广东省深圳市南山区西丽大学城学苑大道1088号台州楼

纳微朗科技(深圳)有限公司

518109 广东省深圳市龙华区观澜街道库坑社区库坑观光路1310号厂房1栋409 (广东,深圳,龙华区)

纳微朗科技(深圳)有限公司

518109 广东省深圳市龙华区观澜街道库坑社区库坑观光路1310号厂房1栋409 (广东,深圳,龙华区)

CN201910769904.3

2019-08-20

CN110600990B

2020-09-04

2020-09-04

授权 ; 权利转移

2020-09-04

授权发明

非南科大

本发明提供一种柔性GaN基激光器与HEMT单片集成器件的制备方法，包括：S1：在GaN基激光器衬底层上形成第一GaN基激光器、在第一衬底上形成第一HEMT外延片；S2：干法刻蚀激光器n型电极区域、激光器台面结构、及HEMT台面结构；S3：湿法刻蚀第一HEMT外延片的第一衬底，获得第二HEMT外延片，去除GaN基激光器的GaN基激光器衬底层，获得第二GaN基激光器；S4：将第二GaN基激光器以及第二HEMT外延片分别转移至对应的临时衬底，获得第三GaN基激光器和第三HEMT外延片；S5：将第三GaN基激光器和第三HEMT外延片先后转移至第三衬底；第三衬底为柔性衬底；S6：制备钝化层及电极。本发明避免器件隔离性差、难以实现柔性集成的技术问题，实现了安全性高、机械柔性和轻薄性好的技术效果。

The invention provides preparation methods for a flexible GaN-based laser and HEMT monolithically integrated device. A method comprises the steps of S1, forming a first GaN-based laser on a GaN-basedlaser substrate layer, and forming a first HEMT epitaxial wafer on a first substrate; S2, carrying out dry etching on a laser n-type electrode area, a laser mesa structure and an HEMT mesa structure;S3, carrying out wet etching on the first substrate of the first HEMT epitaxial wafer, thereby obtaining a second HEMT epitaxial wafer, and removing the GaN-based laser substrate layer of the GaN-based laser, thereby obtaining a second GaN-based laser; S4, transferring the second GaN-based laser and the second HEMT epitaxial wafer to corresponding temporary substrates, thereby obtaining a third GaN-based laser and a third HEMT epitaxial wafer; S5, transferring the third GaN-based laser and the third HEMT epitaxial wafer to a third substrate, wherein the third substrate is the flexible substrate; and S6, preparing a passivation layer and electrodes. According to the method, the technical problem that the device is poor in isolation and flexible integration is difficult to realize is avoided, and a technical effect of high safety and good mechanical flexibility and thinness is realized.

H01L29/7786 ; H01S5/0261 ; H01S5/343

H01S5/026 ; H01S5/343 ; H01L29/778

（TRANSFER OF PATENT RIGHT）[2023-04-28][CN]

1

1

2019-08-20

李明

北京中知法苑知识产权代理有限公司

PatSnap

田朋飞,闫春辉,钱泽渊,等. 一种基于柔性衬底的GaN基激光器与HEMT的器件转移制备方法[P]. 2020-09-04.