用于功率模块封装的烧结纳米铜的机械性能及可靠性研究

  随着电子设备的不断发展，功率器件作为其中的重要组成部分，其性能要求也越来越高。特别是第三代半导体的功率器件，其工作结温高，传统芯片连接材料难以满足要求。因此，需要寻找一种新的连接材料来解决这个问题。在众多的连接材料中，烧结纳米银和烧结纳米铜成为了备受关注的材料。目前对于成本更低的烧结铜的研究仍然不足，缺乏对其微观机械性能和可靠性的研究，这使热力学仿真受到了限制，同时也缺乏将烧结铜应用于实际封装模块中的验证。因此需要这类研究来指导烧结铜的热力学仿真，验证烧结铜的可靠性和实际应用的可行性。

  本课题通过对经过温度冲击老化的烧结铜接头进行剪切强度测试，分析了烧结铜接头在温度冲击老化过程中组织结构的演化情况。通过对烧结铜进行纳米压痕实验，得出了烧结铜在不同温度冲击循环次数下的机械参数和弹塑性本构模型。结果表明，在3000个循环内，烧结铜的机械性能没有明显退化，具有良好的温度冲击可靠性。高温下的纳米压痕实验表明，温度冲击老化不会使烧结铜的高温性能退化，反而有增强的趋势，证明烧结铜材料在温度冲击老化中具有良好的高温稳定性。通过纳米压痕实验提取出了烧结铜的蠕变特性。结果表明，未经温度冲击循环的烧结铜在常温下的蠕变应力指数为34.91，远高于烧结银的4.46。制备了烧结铜SiC MOSFET封装模块，并对模块进行温度冲击老化，通过表征其电学性能和热学性能，结合有限元仿真，评价了烧结铜模块的性能和温度冲击可靠性。结果表明，烧结铜模块具有足够优秀的电学和热学性能以及温度冲击可靠性，可以应用于实际功率模块封装应用中。

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