氧化镓钛基欧姆接触 工艺实现与机理研究

β-Ga₂O₃是一种超宽禁带半导体材料，具有 4.2 eV~5.3 eV 的禁带宽度，在高功率器件领域备受青睐。 目前β-Ga₂O₃的研究仍处于初级阶段，还存在许多问题亟待解决，其中实现良好的欧姆接触是一个很大的挑战。 在材料制备方面，分子束外延（MBE）技术具有高纯度、高质量、高精度、高可控性等优点，广泛应用于半导体器件、光电器件、量子器件等领域。 本文对MBE外延生长的以C面蓝宝石（Al₂O₃）为衬底的硅掺杂β-Ga₂O₃薄膜进行表征分析，发现当硅浓度小于1.2×10²⁰ cm^-3时，薄膜的载流子浓度和载流子迁移率随掺杂浓度的增加而增加，载流子浓度可达8×10¹⁸ cm^-3，同时具有最高迁移率2.3 cm²/V·s； 当硅浓度继续增加，所生长的β-Ga₂O₃薄膜晶体形态迅速由单晶向多晶转变，导致β-Ga₂O₃晶体的电阻率从0.4 Ω·cm迅速升高，并呈现绝缘特性。 这说明MBE外延β-Ga₂O₃时过高的硅掺杂浓度会改变β-Ga₂O₃的单晶生长模式。 在此基础上，该工作在不同硅掺杂浓度的β-Ga₂O₃薄膜上制备Ti/β-Ga₂O₃欧姆接触结构，发现比接触电阻随β-Ga₂O₃衬底载流子浓度的提升而下降，最佳的比接触电阻为6.48×10^-5 Ω·cm²，表明β-Ga₂O₃层高载流子浓度是提升其欧姆接触性能的有效策略。 此外，该工作还对金属钛/氧化镓界面进行表征分析，验证了钛氧化合物在钛基欧姆接触中的关键作用，为优化氧化镓等镓基宽禁带半导体的欧姆接触工艺提供了有价值的参考。

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