二维半导体黑磷物性及光电探测器研究

黑磷（BP）作为一种窄带隙二维材料，具有高迁移率、随层数和电场可调的 带隙、晶体各向异性等优点，在光电探测，尤其是中红外探测方面具有巨大的潜 力。相较于单纯使用黑磷，采用过渡金属二硫化物等二维材料与黑磷形成异质结， 可以极大地丰富器件的结构和功能，实现高探测率、低噪声的光电探测器。目前 文献中的二维黑磷光电探测器多使用二硫化钼（MoS2）与黑磷形成异质结。相较 于二硫化钼，二硫化铼（ReS2）具有晶体各向异性以及多层直接带隙等优势，并 且可以与黑磷形成 p-n 结，实现高效的光电探测。但目前对于黑磷-二硫化铼异质 结的中红外光电探测器研究还十分缺乏。 本次研究工作中我们制备了基于黑磷-二硫化铼异质结的自供电中红外探测 器，研究了黑磷的电学和光电响应特性。探测器具有从可见光至中红外波段的宽 谱光电流响应，零偏压下红外波段的光响应最高达到 0.3 mA/W，归一化探测率达 到 3 × 105 cm ⋅ Hz1/2/W，光电流信号强度可以通过栅压调控。探测器对红外光的 探测具有偏振选择性，对 3.3 μm 入射光探测的偏振比高达 270。 同时，我们通过在高反射率底电极上堆叠材料，增强了探测器对特定红外波 段入射光的吸收，有效调控了探测器的响应光谱。通过引入石墨烯作为缓冲层，我 们改善了材料与金属界面的接触特性，不仅增强了器件的电学整流特性，更提高 了探测器的红外光电响应性能。本篇工作展现了黑磷-二硫化铼异质结在未来中红 外光电探测方面的巨大潜力，为未来二维材料光电探测器的研究提供了有用的信 息。

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