量子点发光二极管的载流子注入和传输机理研究

量子点发光二极管（QLED）因具有发光波长易调谐、发光色纯度高以及可溶液加工等优点，有望在平板显示和固态照明等领域得到应用。经过学术界和产业界的攻坚克难，近年来，QLED的效率和寿命等性能得到了极大的提升。目前红、绿和蓝三色QLED的外量子效率（EQE）均已突破20%，接近于理论极限值。然而，针对QLED的工作机理，如载流子的注入/传输、激子的复合、器件的老化等方面的研究仍不够深入和完善，这限制了器件性能的进一步提升。针对上述问题，本文重点研究QLED中的载流子注入和传输机理，以揭示载流子的注入和传输行为，从根本上提升QLED的性能。

围绕载流子的注入和传输，本文完成了如下研究：

研究了QLED中亚带隙启亮的发光机理和空穴注入机理，揭示了：在亚带隙电压驱动下，热能辅助热电子发射是QLED空穴注入的关键机制；在大电压驱动下，电场和热能共同辅助热电子发射为QLED的空穴注入机制。此项工作剖析了QLED中载流子的注入动力学过程，揭示并回答了困扰研究者多年的亚带隙启亮背后的空穴注入机理问题。

研究了QLED中电子传输和泄漏机理，揭示了电子的五个传输通道，即：电子从功能层的缺陷能级传输泄漏、电子在量子点内部发生辐射复合、电子在量子点内部发生非辐射复合、电子向空穴传输层泄漏以及电子在空穴传输层/量子点的界面复合的泄漏。其中电子向空穴传输层泄漏的通道以及电子在空穴传输层/量子点的界面复合的泄漏通道严重影响了QLED的工作稳定性和发光效率。通过抑制电子的泄漏，可有效改善器件的发光效率。此项工作开发了追踪电子泄漏的有效方法，并进一步完善了QLED的电子传输机理。

研究了CdSe-QLED和InP-QLED的电荷平衡，提出了鉴别QLED过剩载流子的电学表征方案，成功甄别出CdSe-QLED和InP-QLED中过剩载流子分别为电子和空穴。此项工作为鉴别过剩载流子提供了一个行之有效的方法，加深了我们对QLED载流子注入机理的理解。

总体而言，本文研究并揭示了QLED中的载流子注入和传输机理，研究结果有助于QLED工作机理的完善，并为开发能量转换效率超过100%的QLED、高效率高亮度QLED、长寿命QLED提供指引和参考。

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