碳纳米管的制备及其在场发射中的应用研究

碳纳米管阴极电子源在如 X 射线管类的真空电子器件中的有着重要的 应用。传统的场发射器电子源采用热阴极电子发射源，但其存在一些重大 缺陷。相比之下，碳纳米管冷阴极发射器具有低开启场、高稳定性、大发 射电流密度和长使用寿命等优点，因此被视为电子源发射极的理想选择， 并在微电子器件领域得到广泛应用。虽然碳纳米管冷阴极已经在一些领域 取得了重要进展，但是碳纳米管发射器的电流稳定性还需要进一步提高。 本论文对碳纳米管阵列的制备工艺与其场发射性能进行了探索，旨在研究 出更高场发射性能的电子材料。 将碳纳米管涂覆 sp3 键合碳涂层被认为是稳定场发射电流的一个优异的 解决方法。在本研究中对碳纳米管阵列的制备工艺进行了优化，还对碳纳 米管阵列表面进行沉积覆膜处理，最后还探索了类金刚石碳薄膜对场发射 性能的影响，具体研究内容包括： 碳纳米管阵列的生长及场发射性能研究。本文在低压条件下，通过热 解酞菁铁的方式，优化了碳纳米管阵列化学气相沉淀法的制备工艺。成功 制备了大面积方向一致的碳纳米管阵列。对其进行场发射测试，结果表明， 该方案制备的碳纳米管开启电场仅为 1.1 V/μm，当电场为 2.5 V/μm 时, 具 有的电流密度达 3.26 mA/cm2。 通过滤波阴极真空弧蒸发将高质量的超薄金刚石类碳薄膜作为 sp3 碳涂 层，均匀地沉积在碳纳米管阵列上，提高了其在场发射中的稳定性。随后 对类金刚石碳薄膜对场发射性能影响进行探索。由于空间电荷诱导能带弯 曲，在平衡状态下类金刚石碳膜层的耗尽区被最大化，碳纳米管阵列的场 发射增强因子会因为具有类金刚石碳膜而变化。

关键词：碳纳米管；场发射；类金刚石碳膜；能带弯曲

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