第三代半导体材料 GaN 在电机驱动中的应用设计

Gallium Nitride is a relatively new semiconductor material, which has matured in its application in power chargers, but it is still in its early stages in the field of motor drive. Motors are widely used in various applications and consume about 46% of the world's total electricity, so improving their driving efficiency can reduce the world's total energy consumption. This paper aims to develop a high-performance high-speed motor driver based on GaN power devices.

To fully exploit the excellent characteristics of GaN devices, this paper investigates the effects of driving parameters and parasitic parameters on the switching characteristics of GaN devices through a dual-pulse simulation experiment. Although GaN devices have higher switching speed and power density, which can improve system efficiency, the problem of gate-source voltage overshoot caused by resonance and bridge arm crosstalk due to high switching frequency cannot be ignored, affecting the reliability of the driver. Therefore, this paper investigates the method of suppressing the problem of gate-source voltage overshoot and improves a negative voltage drive structure of an RC network to reduce switching losses and improve the reliability of the driver. To investigate the excellent characteristics of GaN motor drivers in driving high-speed motors, this paper builds a high-speed motor drive platform and uses positionless sensing technology to drive a high-speed motor with a rated speed of 100000 rpm, verifying the excellent characteristics of GaN motor drivers in driving high-speed motors. This study has certain engineering value for improving the reliability of motor drivers and promoting the application of GaN in the high-speed motor drive.

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