Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures

Xinyu Wang; Zuoheng Jiang; Junting Chen; Junlei Zhao; Han Wang; Chengcai Wang; Haohao Chen; Jun Ma; Xiaolong Chen; Mengyuan Hua

10.1109/ISPSD57135.2023.10147433

2023-05-28

ISPSD

1063-6854

979-8-3503-9683-6

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

2023-May

115-118

28 May-1 June 2023

Hong Kong

The frozen trap effect can influence the threshold voltage of $p$-GaN gate HEMT when the temperature decreases to 15 K. The freezing of hole traps occurs at a higher temperature since their energy levels are deeper than that of electron traps, leading to a turning point of the threshold voltage and gate capacitance depending on temperatures. A high gate bias facilitates the emission of frozen carriers, which has a barrier-lowering effect, counteracting the frozen trap effect. At cryogenic temperatures, the threshold voltage of $p$-GaN gate HEMT becomes stable after long-time gate stress, showing promising potential for cryogenic applications.

P-GaN Gate HEMT Threshold Voltage Instability Cryogenic Temperature Frozen Trap Effect

第一 ; 通讯

EI

20232614326894

Capacitance ; Computer Circuits ; Cryogenics ; Gallium Nitride ; III-V Semiconductors ; Threshold Voltage

Cryogenics:644.4 ; Electricity: Basic Concepts And Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Computer Circuits:721.3

IEEE

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China

Xinyu Wang,Zuoheng Jiang,Junting Chen,et al. Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures[C],2023:115-118.