Impacts of $n$-GaN Doping Concentration on Gate Reliability of $p-n$ Junction/AlGaN/GaN HEMTs

Chengcai Wang; Haohao Chen; Zuoheng Jiang; Junting Chen; Mengyuan Hua

10.1109/ISPSD57135.2023.10147583

2023-05-28

ISPSD

1063-6854

979-8-3503-9683-6

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

2023-May

16-19

28 May-1 June 2023

Hong Kong

In this work, the $p-n$ junction (PNJ)/AlGaN/GaN HEMTs with different effective $n$-GaN doping concentrations ($N_{\mathrm{D}}$) of $1.7\times 10^{20}$ cm−3, $2.6\times 10^{19}$ cm−3 and $1\times 10^{17}$ cm−3 are comparatively studied to reveal the impacts of $N_{\mathrm{D}}$ on gate reliability. With lower $N_{\mathrm{D}}$, gate leakage reduces, and forward gate breakdown voltage boosts up to 18.6 V, whereas the maximum applicable gate voltage for a 10-year lifetime will not continually increase when $N_{\mathrm{D}}$ decreases to $1\times 10^{17}$ cm−3. This feature is attributed to premature breakdown caused by electric-field crowding at the surface of the fully depleted n-GaN. To fully exploit the reliability of the PNJ-HEMTs, it is suggested that the $N_{\mathrm{D}}$ of PNJ-HEMTs should be carefully designed to widen the depletion region in $p-n$ junction appropriately, while premature breakdown caused by electric-field crowding at the surface should be avoided.

GaN E-mode P-GaN High Electron Mobility Transistor (HEMT) Time-dependent Gate Breakdown (TDGB)

第一 ; 通讯

EI

20232614326935

Electric Fields ; Gallium Nitride ; III-V Semiconductors ; Reliability ; Semiconductor Junctions

Electricity: Basic Concepts And Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2

IEEE

Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China

Chengcai Wang,Haohao Chen,Zuoheng Jiang,et al. Impacts of $n$-GaN Doping Concentration on Gate Reliability of $p-n$ Junction/AlGaN/GaN HEMTs[C],2023:16-19.