High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT

Yanlin Wu1; Muqin Nuo1; Junjie Yang1; Zheyang Zheng2; Li Zhang2; Kevin J. Chen2; Mengyuan Hua3; Yilong Hao1; Xuelin Yang4; Bo Shen4; Maojun Wang1; Jin Wei1

10.1109/ISPSD57135.2023.10147690

2023-05-28

1063-6854

979-8-3503-9683-6

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

2023-May

378-381

28 May-1 June 2023

Hong Kong

The dynamic stability of E-mode active-passivation p-GaN gate HEMT (AP- HEMT) is investigated, including dynamic $V_{\text{th}}$ shift, dynamic $R_{\text{ON}}$ degradation, and dynamic leakage current. The AP-HEMT features an ohmic-type gate/p-GaN contact that results in a stable dynamic $V_{\text{th}}$, as the charge storage effect associated with the floating p-GaN layer is avoided. At a 650- V $V_{\text{DS}}$ stress, the AP- HEMT exhibits a low dynamic $R_{\text{ON}}$/static $R_{\text{ON}}$ ratio of 1.4, which can be attributed to the presence of the p-GaN active-passivation layer that screens the influence of surface traps. The hole injection in the p-GaN gate HEMT is expected to increase the dynamic OFF-state leakage current, as the holes reduce the energy barrier of the buffer layer. Despite a larger injector area, the AP-HEMT exhibits a lower dynamic leakage current increase, which is due to the relocation of the electric field peak from the gate edge towards the drain. This relocation suppresses the lowering of the energy barrier under the gate. Overall, the unique device structure of the AP-HEMT leads to a negligible dynamic $V_{\text{th}}$ shift, a low dynamic $R_{\text{ON}}$, and a small OFF-state dynamic leakage increase.

active-passivation p-GaN gate HEMT (AP-HEMT) Dynamic stability Dynamic $V_{\text{th}}$ drift Dynamic $R_{\text{ON}}$ degradation Dynamic leakage current

其他

EI

20232614326968

Buffer layers ; Drain current ; Electric fields ; Energy barriers ; Gallium nitride ; High electron mobility transistors ; III-V semiconductors ; Leakage currents

Protection Methods:539.2.1 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Crystalline Solids:933.1

IEEE

1.School of Integrated Circuits, Peking University, Beijing, China
2.Dept. of ECE, The Hong Kong University of Science and Technology, Hong Kong
3.Dept. of EEE, Southern University of Science and Technology, Shenzhen, China
4.School of Physics, Peking University, Beijing, China

Yanlin Wu,Muqin Nuo,Junjie Yang,et al. High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT[C],2023:378-381.