南方科技大学知识苑(SUSTech KC): Demonstration of beta-Ga2O3 Heterojunction Gate Field-Effect Rectifier

题名	Demonstration of beta-Ga2O3 Heterojunction Gate Field-Effect Rectifier
作者	Liu, Qi 1; Zhou, Xuanze 1; He, Qiming 1; Hao, Weibing 1; Zhao, Xiaolong 1; Hua, Mengyuan2 ; Xu, Guangwei 1; Long, Shibing 1
通讯作者	Xu, Guangwei; Long, Shibing
发表日期	2023-06-01
DOI	10.1109/TED.2023.3279810
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES 影响因子和分区
ISSN	0018-9383
EISSN	1557-9646
卷号	70 期号:7页码:3762-3767
摘要	In this work, a beta-Ga2O3 field-effect rectifier (FER) with a p-NiOx gate aimed at low conduction loss, low leakage current, and capability of on-chip integration has been demonstrated. The proposed FER exhibits a low turn-on voltage (V-on) of 0.85 V comparable to Schottky barrier diodes (SBDs). The p-NiOx in FER offers an additional conduction path at high forward bias, which enhances the forward current. Compared with the lateral heterojunction diode (HJD) and SBD on the same substrate, the FER shows the best tradeoff between ON-state and OFF-state power dissipation, including lower Von than HJD (similar to 41% of HJD) and lower leakage current than SBD (four orders of magnitude lower). The merits of this structure also extend to the high-temperature operation regime of the device. Good rectification characteristics of FER are observed at elevated temperatures. The proposed FER with low Von, high-voltage blocking capability and process compatibility with field-effect transistors (FETs) has the potential of being used as a low-power loss rectifier in future beta-Ga2O3 power integrated circuits (ICs).
关键词	beta-Ga2O3 field-effect rectifier (FER) het-erojunction (HJ) NiOx power diode power loss
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
资助项目	National Natural Science Foundation of China["61925110","U20A20207","62004184","62004186","62234007"] ; Key-Area Research and Development Program of Guangdong Province[2020B010174002] ; University of Science and Technology of China (USTC)["YD2100002009","YD2100002010"] ; Fundamental Research Plan[JCKY2020110B010] ; Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences (CAS)[2022HSC-CIP024]
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied
WOS记录号	WOS:001012519400001
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
EI入藏号	20232414220108
EI主题词	Field effect transistors ; Heterojunctions ; Leakage currents ; Logic gates ; Nickel oxide ; Threshold voltage
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Electron Tubes:714.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Logic Elements:721.2 ; Inorganic Compounds:804.2
ESI学科分类	ENGINEERING
来源库	Web of Science
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10144336
引用统计	被引频次[WOS]：7
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/549006
专题	工学院_电子与电气工程系
作者单位	1.Univ Sci & Technol China USTC, Sch Microelect, Hefei 230026, Peoples R China 2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Liu, Qi,Zhou, Xuanze,He, Qiming,et al. Demonstration of beta-Ga2O3 Heterojunction Gate Field-Effect Rectifier[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2023,70(7):3762-3767.
APA	Liu, Qi.,Zhou, Xuanze.,He, Qiming.,Hao, Weibing.,Zhao, Xiaolong.,...&Long, Shibing.(2023).Demonstration of beta-Ga2O3 Heterojunction Gate Field-Effect Rectifier.IEEE TRANSACTIONS ON ELECTRON DEVICES,70(7),3762-3767.
MLA	Liu, Qi,et al."Demonstration of beta-Ga2O3 Heterojunction Gate Field-Effect Rectifier".IEEE TRANSACTIONS ON ELECTRON DEVICES 70.7(2023):3762-3767.