Stable and reliable IGZO resistive switching device with HfAlO (x) interfacial layer

Peng, Huiren1; Liu, Hongjun1; Ma, Xuhang2; Cheng, Xing1

2023-09-03

10.1088/1361-6528/acd5d8

NANOTECHNOLOGY   影响因子和分区

0957-4484

1361-6528

The performance stability of the resistive switching (RS) is vital for a resistive random-access memory device. Here, by inserting a thin HfAlO (x) layer between the InGaZnO (IGZO) layer and the bottom Pt electrode, the RS performance in amorphous IGZO memory device is significantly improved. Comparing with a typical metal-insulator-metal structure, the device with HfAlO (x) layer exhibits lower switching voltages, faster switching speeds, lower switching energy and lower power consumption. As well, the uniformity of switching voltage and resistance state is also improved. Furthermore, the device with HfAlO (x) layer exhibits long retention time (>10(4) s at 85 degrees C) , high on/off ratio and more than 10(3) cycles of endurance at atmospheric environment. Those substantial improvements in IGZO memory device are attributed to the interface effects with a HfAlO (x) insertion layer. With such layer, the formation and rupture locations of Ag conductive filaments are better regulated and confined, thus an improved performance stability.

IGZO resistive switching ReRAM hafnium aluminum oxide conductive filament

SCI ; EI

英语

第一 ; 通讯

Shenzhen Science and Technology Innovation Committee for Talent Development[RCJC20200714114436046] ; Key-Area Research and Development Program of Guangdong Province[2020B0101030001]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:001008183100001

IOP Publishing Ltd

20232614315569

Alumina ; Aluminum oxide ; Gallium compounds ; Hafnium oxides ; Metal insulator boundaries ; Nonvolatile storage ; Semiconducting indium compounds ; Zinc compounds

Compound Semiconducting Materials:712.1.2 ; Data Storage, Equipment and Techniques:722.1 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Greater Bay Area Univ Joint Lab Micro & Nanofabric, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Core Res Facil, Shenzhen 518055, Peoples R China

Peng, Huiren,Liu, Hongjun,Ma, Xuhang,et al. Stable and reliable IGZO resistive switching device with HfAlO (x) interfacial layer[J]. NANOTECHNOLOGY,2023,34(36).

Peng, Huiren,Liu, Hongjun,Ma, Xuhang,&Cheng, Xing.(2023).Stable and reliable IGZO resistive switching device with HfAlO (x) interfacial layer.NANOTECHNOLOGY,34(36).

Peng, Huiren,et al."Stable and reliable IGZO resistive switching device with HfAlO (x) interfacial layer".NANOTECHNOLOGY 34.36(2023).