南方科技大学知识苑(SUSTech KC): Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%

题名	Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%
作者	Li, Haotao; Zhou, Shiming; Chen, Shuming
通讯作者	Chen, Shuming
发表日期	2023-06-01
DOI	10.1002/lpor.202300371
发表期刊	LASER & PHOTONICS REVIEWS 影响因子和分区
ISSN	1863-8880
EISSN	1863-8899
卷号	17 期号:8
摘要	Top-emitting (TE) quantum-dot light-emitting diodes (QLEDs) can exhibit higher light outcoupling efficiency (OCE) compared to bottom-emitting (BE) QLEDs due to the eliminated substrate mode and enhanced microcavity effect. In this study, TE QLEDs with an OCE of over 45% are realized by simultaneously optimizing the thicknesses of both indium-zinc-oxide (IZO) phase tuning layers and IZO top transparent electrodes. To reduce the resistance, the IZO top electrodes are equipped with an auxiliary metal electrode. Consequently, the red QLEDs demonstrate a high external quantum efficiency (EQE) of 38.2%. Furthermore, by applying a scattering layer on the IZO top electrode, the red QLEDs demonstrate record-breaking efficiencies of EQE 44.5%, power efficiency 92.2 lm W-1, and current efficiency 93.7 cd A(-1). The proposed device architecture and optimization strategy contribute to a new design scheme for the preparation of highly efficient QLEDs for displays and lighting applications.
关键词	light outcoupling quantum-dot light-emitting diodes scattering layer top-emitting
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
资助项目	National Natural Science Foundation of China[62174075] ; Shenzhen Science and Technology Program["JCYJ20210324105400002","JCYJ20220530113809022"] ; Guangdong University Research Program[2020ZDZX3062]
WOS研究方向	Optics ; Physics
WOS类目	Optics ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001013451700001
出版者	WILEY-V C H VERLAG GMBH
EI入藏号	20232614309124
EI主题词	Display devices ; II-VI semiconductors ; Nanocrystals ; Organic light emitting diodes (OLED) ; Quantum efficiency ; Semiconductor quantum dots ; Zinc oxide
EI分类号	Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1
来源库	Web of Science
引用统计	被引频次[WOS]：2
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/549220
专题	工学院_电子与电气工程系
作者单位	Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
第一作者单位	电子与电气工程系
通讯作者单位	电子与电气工程系
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Li, Haotao,Zhou, Shiming,Chen, Shuming. Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%[J]. LASER & PHOTONICS REVIEWS,2023,17(8).
APA	Li, Haotao,Zhou, Shiming,&Chen, Shuming.(2023).Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%.LASER & PHOTONICS REVIEWS,17(8).
MLA	Li, Haotao,et al."Highly Efficient Top-Emitting Quantum-Dot Light-Emitting Diodes with Record-Breaking External Quantum Efficiency of over 44.5%".LASER & PHOTONICS REVIEWS 17.8(2023).