Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg2Sn0.75Ge0.25-Based Thermoelectric Devices

Wu, Xinzhi1; Lin, Yangjian2; Liu, Chengyan1; Han, Zhijia1; Li, Huan1; Wang, Yupeng1; Jiang, Feng1; Zhu, Kang1; Ge, Binghui2; Liu, Weishu1,3

2023-07-01

10.1002/aenm.202301350

ADVANCED ENERGY MATERIALS   影响因子和分区

1614-6832

1614-6840

Electrode contact interfaces for practical thermoelectric (TE) devices require high bonding strength, low specific contact resistivity, and superb stability. Herein, the state-of-the-art Cu2MgFe/Mg2Sn0.75Ge0.25 interface is designed for Mg2Sn0.75Ge0.25-based TE devices, adhering to the general strategy of high bonding propensity, thermal expansion matching, diffusion passivation, and dopant inactivation. The interfacial stability is verified by the in situ transmission electron microscopy analysis, thereby confirming the contributions from decreasing the chemical potential gradient and increasing the diffusion activation energy barrier. The single-leg device exhibits a high power density (& omega;(max)) of 2.6 W cm(-2) and conversion efficiency (& eta;(max)) of 8% under a temperature difference (& UDelta;T) of 370 & DEG;C, which is the record-breaking value in comparison to other Mg-2(Si, Ge, Sn)-based TE devices. Additionally, a two-couple device with p-type Bi2Te3 shows an excellent & omega;(max) of 1.3 W cm(-2) and & eta;(max) of 5.4% under a & UDelta;T of 270 & DEG;C, comparable to commercial Bi2Te3 devices. The proposed interface design strategy provides a general technique for constructing high-performance devices using cutting-edge TE materials.

electrode contact interfaces high-performance thermoelectric devices interface design strategy Mg2Sn0 75Ge0 25

SCI ; EI

英语

第一 ; 通讯

NSFC[52202250] ; Shenzhen Key Projects of Long-Term Support Plan[20200925164021002] ; Shenzhen Fund for Distinguished Young Scholars[RCJC20210706091949018] ; Guangdong Provincial Key Laboratory Program of the Department of Science and Technology of Guangdong Province[2021B1212040001] ; University Synergy Innovation Program of Anhui Province[GXXT-2020-003]

Chemistry ; Energy & Fuels ; Materials Science ; Physics

Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001024053800001

WILEY-V C H VERLAG GMBH

20232814369174

Activation analysis ; Activation energy ; Bismuth compounds ; Conversion efficiency ; Electrodes ; High resolution transmission electron microscopy ; Interface states ; Thermoanalysis

Energy Conversion Issues:525.5 ; Thermodynamics:641.1 ; Optical Devices and Systems:741.3 ; Chemistry:801 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Materials Science:951

Web of Science

1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
2.Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Anhui, Peoples R China
3.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China

Wu, Xinzhi,Lin, Yangjian,Liu, Chengyan,et al. Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg2Sn0.75Ge0.25-Based Thermoelectric Devices[J]. ADVANCED ENERGY MATERIALS,2023,13(32).

Wu, Xinzhi.,Lin, Yangjian.,Liu, Chengyan.,Han, Zhijia.,Li, Huan.,...&Liu, Weishu.(2023).Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg2Sn0.75Ge0.25-Based Thermoelectric Devices.ADVANCED ENERGY MATERIALS,13(32).

Wu, Xinzhi,et al."Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg2Sn0.75Ge0.25-Based Thermoelectric Devices".ADVANCED ENERGY MATERIALS 13.32(2023).