Measurement Geometry and Hydrostatic Pressure-Dependent Magnetoresistance in All-Oxide-Based Synthetic Antiferromagnets

Jin, Feng1; Shao, Jifeng2,3; Zhang, Zixun1; Zhang, Wujun4; Liu, Kai1; Li, Jingyuan2; Liu, Kuan; Dai, Kunjie1; Wang, Qing1; Lv, Qiming1; Hua, Enda1; Chen, Pingfan5; Huang, Zhen1,5; Ma, Chao4; Wang, Lingfei1; Zhao, Yue2,6; Wu, Wenbin1,5,7,8

2023-07-01

10.1002/adfm.202303492

ADVANCED FUNCTIONAL MATERIALS   影响因子和分区

1616-301X

1616-3028

The electronic structure of constituent layers and the spin channel of propagating electrons are critical factors that affect the magnitude and sign of magnetoresistance (MR) in synthetic antiferromagnets (SAFMs), which are important for spintronic applications. However, for all-oxide-based SAFMs, where there is strong coupling between multiple degrees of freedom, spin transport becomes more complex and remains elusive. Here, using ultrathin half-metallic manganite/doped ruthenate SAFMs as a model system, three sign reversals of MR are demonstrated accompanied by the crossover between underlying spin-dependent transport mechanisms. Electron tunneling produces normal MR in the current-perpendicular-to-plane (CPP) geometry at low temperatures, whereas carrier confinement causes inverse MR in the current-in-plane (CIP) geometry. Strikingly, CPP MR can undergo a temperature-driven sign reversal due to resonant tunneling via localized states in the spacer. Moreover, hydrostatic pressure can modulate the interlayer exchange coupling and induce an asymmetric interfacial response to dramatically facilitate electron tunneling, driving a controllable sign reversal of CIP MR. These results provide new insights into understanding and optimization of MR in all-oxide-based SAFMs.

hydrostatic pressure interlayer exchange coupling magnetoresistance measurement geometry synthetic antiferromagnets

SCI ; EI

英语

NI论文

通讯

National Natural Science Foundation of China["11974326","U2032218","12074365","12074001","12274120","11804342","11804402"] ; National Basic Research Program of China[2020YFA0309100] ; Fundamental Research Funds for the Central Universities["WK2030000035","WK2340000102"] ; Hefei Science Center of Chinese Academy of Sciences["2021HSC-UE010","2021HSC-CIP017","2020HSC-UE014"] ; Key-Area Research and Development Program of Guangdong Province[2019B010931001] ; open fund of Information Materials and Intelligent Sensing Laboratory of Anhui Province[IMIS202107]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001026904200001

WILEY-V C H VERLAG GMBH

20232814391954

Antiferromagnetic materials ; Degrees of freedom (mechanics) ; Geometry ; Hydraulics ; Hydrostatic pressure ; Manganites ; Resonant tunneling ; Tunnelling magnetoresistance

Liquid Dynamics:631.1.1 ; Hydraulics:632.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Magnetic Materials:708.4 ; Inorganic Compounds:804.2 ; Mathematics:921 ; Mechanics:931.1

MATERIALS SCIENCE

Web of Science

1.Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
3.Int Quantum Acad, Shenzhen 518048, Peoples R China
4.Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Peoples R China
5.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
6.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
7.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
8.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China

Jin, Feng,Shao, Jifeng,Zhang, Zixun,et al. Measurement Geometry and Hydrostatic Pressure-Dependent Magnetoresistance in All-Oxide-Based Synthetic Antiferromagnets[J]. ADVANCED FUNCTIONAL MATERIALS,2023,33.

Jin, Feng.,Shao, Jifeng.,Zhang, Zixun.,Zhang, Wujun.,Liu, Kai.,...&Wu, Wenbin.(2023).Measurement Geometry and Hydrostatic Pressure-Dependent Magnetoresistance in All-Oxide-Based Synthetic Antiferromagnets.ADVANCED FUNCTIONAL MATERIALS,33.

Jin, Feng,et al."Measurement Geometry and Hydrostatic Pressure-Dependent Magnetoresistance in All-Oxide-Based Synthetic Antiferromagnets".ADVANCED FUNCTIONAL MATERIALS 33(2023).