题名 | A Fully-Integrated LDO with Two-Stage Cross-Coupled Error Amplifier for High-Speed Communications in 28-nm CMOS |
作者 | |
DOI | |
发表日期 | 2023
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ISSN | 0271-4302
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ISBN | 978-1-6654-5110-9
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会议录名称 | |
卷号 | 2023-May
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页码 | 1-4
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会议日期 | 21-25 May 2023
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会议地点 | Monterey, CA, USA
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摘要 | This paper presents a fully-integrated flipped-voltage-follower-based low-dropout regulator (LDO), with proposed high-gain two-stage cross-coupled error amplifier (XCEA). Besides, the effectiveness of bypass capacitors and diversified load capacitors is discussed. Consuming $\mathbf{170}-\boldsymbol{\mu} \mathbf{A}$ quiescent current and occupying area of 0.019 mm2, the LDO features 25-MHz unity-gain bandwidth (UGB) at 20-mA load to satisfy fast response requirement in high-speed transmitter. The simulated voltage undershoot is 38.85 mV for a load transient current stepping from $\mathbf{1}\ \boldsymbol{\mu} \mathbf{A}$ to 25 mA in 50 ps with $\boldsymbol{C}_{\mathbf{L}} =\mathbf{100}\ \mathbf{pF}$. Owing to the proposed XCEA and the filter capacitor, the PSR is measured to be -41 dB at 100 kHz and -36 dB at 1 MHz. |
关键词 | |
学校署名 | 第一
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相关链接 | [IEEE记录] |
收录类别 | |
WOS记录号 | WOS:001038214601042
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EI入藏号 | 20233314552527
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EI主题词 | Buffer amplifiers
; CMOS integrated circuits
; Electric current regulators
; Voltage regulators
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EI分类号 | Electric Equipment:704.2
; Amplifiers:713.1
; Semiconductor Devices and Integrated Circuits:714.2
; Control Equipment:732.1
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来源库 | IEEE
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全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10181630 |
引用统计 |
被引频次[WOS]:1
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成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/553189 |
专题 | 工学院_深港微电子学院 |
作者单位 | School of Microelectronics, Southern University of Science and Technology, Shenzhen, China |
第一作者单位 | 深港微电子学院 |
第一作者的第一单位 | 深港微电子学院 |
推荐引用方式 GB/T 7714 |
Dongfan Xu,Yangyi Zhang,Zhenghao Li,et al. A Fully-Integrated LDO with Two-Stage Cross-Coupled Error Amplifier for High-Speed Communications in 28-nm CMOS[C],2023:1-4.
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条目包含的文件 | 条目无相关文件。 |
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