A Fully-Integrated Half-Bridge GaN Driver for Bidirectional Power Transfer

Xinyi Li; Yuan Gao

10.1109/ISCAS46773.2023.10181464

2023

IEEE International Symposium on Circuits and Systems (ISCAS)

0271-4302

978-1-6654-5110-9

2023 IEEE International Symposium on Circuits and Systems (ISCAS)

2023-May

1-4

21-25 May 2023

Monterey, CA, USA

This paper presents a fully-integrated half-bridge GaN driver for bidirectional power transfer. Three-level/bipolar gate driver is introduced for the power switches to improve reliability at high dv/dt. On-chip bootstrap circuit with charge sharing reduces chip area and protects high-side switch. The designed GaN driver is fabricated with a 0.18μm BCD process. Measurement results show that at 5MHz operating frequency, the highest input voltage reaches 40V in buck mode and the highest output voltage ups to 36V in boost mode. The peak efficiencies of the design are 93.21 % for the 20V-to-12V conversion and 91.17% for the 12V -to-18V conversion. The design delivers a maximum power of 21.15W in buck mode.

Gallium Nitride (GaN) Driver Gate Driver Bootstrap Circuit Bidirectional Converter

第一 ; 通讯

CPCI-S ; EI

WOS:001038214600099

20233314552208

Energy transfer ; III-V semiconductors ; Power converters ; Timing circuits

Semiconducting Materials:712.1 ; Pulse Circuits:713.4

IEEE

School of Microelectronics, Southern University of Science and Technology, Shenzhen, China

Xinyi Li,Yuan Gao. A Fully-Integrated Half-Bridge GaN Driver for Bidirectional Power Transfer[C],2023:1-4.