| 题名 | Ambipolar Doping of Monolayer FeSe by Interface Engineering |
| 作者 | |
| 通讯作者 | Song, Can-Li |
| 发表日期 | 2023-07-01
|
| DOI | |
| 发表期刊 | |
| ISSN | 0256-307X
|
| EISSN | 1741-3540
|
| 卷号 | 40期号:8 |
| 摘要 | We report on ambipolar modulation doping of monolayer FeSe epitaxial films grown by molecular beam epitaxy and in situ spectroscopic measurements via a cryogenic scanning tunneling microscopy. It is found that hole doping kills superconductivity in monolayer FeSe films on metallic Ir(001) substrates, whereas electron doping from polycrystalline IrO2/SrTiO3 substrate enhances significantly the superconductivity with an energy gap of 10.3 meV. By exploring substrate-dependent superconductivity, we elucidate the essential impact of substrate work functions on the superconductivity of monolayer FeSe films. Our results therefore offer a valuable reference guide for further enhancement of the transition temperature T (c) in FeSe-based superconductors by interface engineering. |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 其他
|
| 资助项目 | National Natural Science Foundation of China[12141403]
; National Key Ramp;D Program of China[2022YFA1403100]
|
| WOS研究方向 | Physics
|
| WOS类目 | Physics, Multidisciplinary
|
| WOS记录号 | WOS:001033748400001
|
| 出版者 | |
| EI入藏号 | 20233114472497
|
| EI主题词 | Iridium compounds
; Iron compounds
; Metal substrates
; Molecular beam epitaxy
; Scanning tunneling microscopy
; Selenium compounds
; Semiconductor doping
; Strontium titanates
; Transition metals
|
| EI分类号 | Metallurgy and Metallography:531
; Semiconducting Materials:712.1
; Chemical Products Generally:804
; Coating Materials:813.2
; Atomic and Molecular Physics:931.3
; Crystal Growth:933.1.2
|
| ESI学科分类 | PHYSICS
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：0
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/553266 |
| 专题 | 南方科技大学 |
| 作者单位 | 1.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China 2.Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China 3.Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China 4.Southern Univ Sci & Technol, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 |
Cheng, Fang-Jun,Zhang, Yi-Min,Fan, Jia-Qi,et al. Ambipolar Doping of Monolayer FeSe by Interface Engineering[J]. CHINESE PHYSICS LETTERS,2023,40(8).
|
| APA |
Cheng, Fang-Jun,Zhang, Yi-Min,Fan, Jia-Qi,Song, Can-Li,Ma, Xu-Cun,&Xue, Qi-Kun.(2023).Ambipolar Doping of Monolayer FeSe by Interface Engineering.CHINESE PHYSICS LETTERS,40(8).
|
| MLA |
Cheng, Fang-Jun,et al."Ambipolar Doping of Monolayer FeSe by Interface Engineering".CHINESE PHYSICS LETTERS 40.8(2023).
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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