南方科技大学知识苑(SUSTech KC): Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

题名	Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
作者	Persson, Axel R. R.1,2; Gustafsson, Anders 3; Bi, Zhaoxia 3,4; Samuelson, Lars3,5 ; Darakchieva, Vanya 2; Persson, Per O. A.1
通讯作者	Persson, Per O. A.
发表日期	2023-07-10
DOI	10.1063/5.0150863
发表期刊	APPLIED PHYSICS LETTERS 影响因子和分区
ISSN	0003-6951
EISSN	1077-3118
卷号	123 期号:2
摘要	Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the corresponding atomic structure. Through a method of spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking mismatch boundaries intersect the quantum well in a pattern correlated with the observed diminished cathodoluminescence intensity. The results highlight the importance of avoiding stacking mismatch in small LED structures due to the relatively large region of non-radiative recombination caused by the mismatch boundaries.
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
重要成果	NI论文
学校署名	其他
资助项目	Swedish Governmental Agency for Innovation Systems (VINNOVA): Competence Center Program[2016-05190] ; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoeping University, Faculty[2009-00971] ; Swedish Research Council[EM16-0024] ; Swedish National Infrastructure in Advanced Electron Microscopy["2022-02832","2021-00171"] ; Swedish Foundation for Strategic Research[RIF21-0026]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001028129700008
出版者	AIP Publishing
EI入藏号	20233014433211
EI主题词	Gallium alloys ; High resolution transmission electron microscopy ; III-V semiconductors ; Indium alloys ; Light emitting diodes ; Optical properties ; Platelets ; Scanning electron microscopy ; Semiconductor alloys ; Semiconductor quantum wells
EI分类号	Biology:461.9 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3
ESI学科分类	PHYSICS
来源库	Web of Science
引用统计	被引频次[WOS]：4
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/553279
专题	南方科技大学
作者单位	1.Linkoping Univ, Dept Phys Chem & Biol IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden 2.Linkoping Univ, Competence Ctr 3 Nitride Technol C3NiT Janzen, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden 3.Lund Univ, Solid State Phys & NanoLund, Box 118, SE-22100 Lund, Sweden 4.Future Display Inst Xiamen, Xiamen 361005, Peoples R China 5.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen, Peoples R China
推荐引用方式 GB/T 7714	Persson, Axel R. R.,Gustafsson, Anders,Bi, Zhaoxia,et al. Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs[J]. APPLIED PHYSICS LETTERS,2023,123(2).
APA	Persson, Axel R. R.,Gustafsson, Anders,Bi, Zhaoxia,Samuelson, Lars,Darakchieva, Vanya,&Persson, Per O. A..(2023).Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs.APPLIED PHYSICS LETTERS,123(2).
MLA	Persson, Axel R. R.,et al."Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs".APPLIED PHYSICS LETTERS 123.2(2023).