南方科技大学知识苑(SUSTech KC): Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT

题名	Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT
作者	Sirui Feng 1; Hang Liao 2; Tao Chen 2; Junting Chen3 ; Yan Cheng 2; Mengyuan Hua3 ; Zheyang Zheng 1; Kevin J. Chen 1
发表日期	2023
DOI	10.1109/LED.2023.3301966
发表期刊	IEEE Electron Device Letters 影响因子和分区
ISSN	1558-0563
卷号	PP 期号:99页码:1-1
关键词	electroluminescence (EL) double-channel p-GaN gate HEMT hole blocking/storage electron spillover suppression
相关链接	[IEEE记录]
收录类别	SCI ; EI
学校署名	其他
WOS记录号	WOS:001080705500001
EI入藏号	20233214504611
EI主题词	Aluminum nitride ; Buffer layers ; Dynamics ; Electroluminescence ; Gallium nitride ; High electron mobility transistors ; Logic gates ; Temperature distribution ; Temperature measurement
EI分类号	Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Logic Elements:721.2 ; Light, Optics and Optical Devices:741 ; Organic Compounds:804.1 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1 ; Temperature Measurements:944.6
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10208223
引用统计	被引频次[WOS]：5
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/553336
专题	工学院_电子与电气工程系
作者单位	1.HKUST Shenzhen Research Institute, Shenzhen, China 2.Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China 3.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
推荐引用方式 GB/T 7714	Sirui Feng,Hang Liao,Tao Chen,et al. Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT[J]. IEEE Electron Device Letters,2023,PP(99):1-1.
APA	Sirui Feng.,Hang Liao.,Tao Chen.,Junting Chen.,Yan Cheng.,...&Kevin J. Chen.(2023).Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT.IEEE Electron Device Letters,PP(99),1-1.
MLA	Sirui Feng,et al."Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT".IEEE Electron Device Letters PP.99(2023):1-1.